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Title: Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

Abstract

In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

Authors:
 [1];  [2];  [3]; ;  [4];  [1];  [5]
  1. Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey)
  2. Department of Electricity and Energy, Pamukkale University, Denizli (Turkey)
  3. Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)
  4. National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China)
  5. (Turkey)
Publication Date:
OSTI Identifier:
22596768
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ATMOSPHERES; CYLINDRICAL CONFIGURATION; DEPTH; DISTRIBUTION; ELECTRON MICROSCOPY; ELECTRONS; FORM FACTORS; GRAZING; LAYERS; MONOCRYSTALS; NANOCOMPOSITES; NANOPARTICLES; NANOSTRUCTURES; SPHERICAL CONFIGURATION; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY SPECTROSCOPY; ZINC OXIDES

Citation Formats

Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com, Ozcan, Yusuf, Orujalipoor, Ilghar, Huang, Yen-Chih, Jeng, U-Ser, Ide, Semra, and Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS. United States: N. p., 2016. Web. doi:10.1063/1.4953352.
Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com, Ozcan, Yusuf, Orujalipoor, Ilghar, Huang, Yen-Chih, Jeng, U-Ser, Ide, Semra, & Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS. United States. doi:10.1063/1.4953352.
Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com, Ozcan, Yusuf, Orujalipoor, Ilghar, Huang, Yen-Chih, Jeng, U-Ser, Ide, Semra, and Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara. Tue . "Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS". United States. doi:10.1063/1.4953352.
@article{osti_22596768,
title = {Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS},
author = {Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com and Ozcan, Yusuf and Orujalipoor, Ilghar and Huang, Yen-Chih and Jeng, U-Ser and Ide, Semra and Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara},
abstractNote = {In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.},
doi = {10.1063/1.4953352},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 21,
volume = 119,
place = {United States},
year = {2016},
month = {6}
}