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Title: Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

Abstract

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.

Authors:
; ; ; ;  [1]; ; ; ;  [2]
  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou, Gansu 730000 (China)
  2. Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
Publication Date:
OSTI Identifier:
22596682
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CONCENTRATION RATIO; DAMAGE; GALLIUM NITRIDES; HEAVY IONS; INDIUM; INDIUM NITRIDES; ION CHANNELING; ION IMPLANTATION; IRRADIATION; MASS SPECTROSCOPY; MEV RANGE 01-10; MONOCRYSTALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE RANGE 0273-0400 K; TIME-OF-FLIGHT METHOD; XENON IONS

Citation Formats

Zhang, Limin, E-mail: zhanglm@lzu.edu.cn, Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Wang, Tieshan, Jiang, Weilin, Dissanayake, Amila, Zhu, Zihua, and Shutthanandan, Vaithiyalingam. Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals. United States: N. p., 2016. Web. doi:10.1063/1.4954691.
Zhang, Limin, E-mail: zhanglm@lzu.edu.cn, Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Wang, Tieshan, Jiang, Weilin, Dissanayake, Amila, Zhu, Zihua, & Shutthanandan, Vaithiyalingam. Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals. United States. doi:10.1063/1.4954691.
Zhang, Limin, E-mail: zhanglm@lzu.edu.cn, Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Wang, Tieshan, Jiang, Weilin, Dissanayake, Amila, Zhu, Zihua, and Shutthanandan, Vaithiyalingam. Tue . "Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals". United States. doi:10.1063/1.4954691.
@article{osti_22596682,
title = {Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals},
author = {Zhang, Limin, E-mail: zhanglm@lzu.edu.cn and Peng, Jinxin and Ai, Wensi and Zhang, Jiandong and Wang, Tieshan and Jiang, Weilin and Dissanayake, Amila and Zhu, Zihua and Shutthanandan, Vaithiyalingam},
abstractNote = {Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.},
doi = {10.1063/1.4954691},
journal = {Journal of Applied Physics},
number = 24,
volume = 119,
place = {United States},
year = {Tue Jun 28 00:00:00 EDT 2016},
month = {Tue Jun 28 00:00:00 EDT 2016}
}