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Title: Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

Abstract

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.

Authors:
; ; ; ;  [1]; ; ; ;  [2]
  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou, Gansu 730000 (China)
  2. Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
Publication Date:
OSTI Identifier:
22596682
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CONCENTRATION RATIO; DAMAGE; GALLIUM NITRIDES; HEAVY IONS; INDIUM; INDIUM NITRIDES; ION CHANNELING; ION IMPLANTATION; IRRADIATION; MASS SPECTROSCOPY; MEV RANGE 01-10; MONOCRYSTALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE RANGE 0273-0400 K; TIME-OF-FLIGHT METHOD; XENON IONS

Citation Formats

Zhang, Limin, E-mail: zhanglm@lzu.edu.cn, Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Wang, Tieshan, Jiang, Weilin, Dissanayake, Amila, Zhu, Zihua, and Shutthanandan, Vaithiyalingam. Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals. United States: N. p., 2016. Web. doi:10.1063/1.4954691.
Zhang, Limin, E-mail: zhanglm@lzu.edu.cn, Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Wang, Tieshan, Jiang, Weilin, Dissanayake, Amila, Zhu, Zihua, & Shutthanandan, Vaithiyalingam. Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals. United States. doi:10.1063/1.4954691.
Zhang, Limin, E-mail: zhanglm@lzu.edu.cn, Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Wang, Tieshan, Jiang, Weilin, Dissanayake, Amila, Zhu, Zihua, and Shutthanandan, Vaithiyalingam. 2016. "Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals". United States. doi:10.1063/1.4954691.
@article{osti_22596682,
title = {Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals},
author = {Zhang, Limin, E-mail: zhanglm@lzu.edu.cn and Peng, Jinxin and Ai, Wensi and Zhang, Jiandong and Wang, Tieshan and Jiang, Weilin and Dissanayake, Amila and Zhu, Zihua and Shutthanandan, Vaithiyalingam},
abstractNote = {Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.},
doi = {10.1063/1.4954691},
journal = {Journal of Applied Physics},
number = 24,
volume = 119,
place = {United States},
year = 2016,
month = 6
}
  • Lattice disorder and compositional changes in InxGa1-xN (x=0.32, 0.47, 0.7, 0.8 and 1.0) films on GaN/Al2O3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3E13 cm-2, the relative level of lattice disorder in InxGa1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich InxGa1-xN (x=0.32 and 0.47),more » significant volume swelling of up to ~25% accompanied with oxidation in In-rich InxGa1-xN (x=0.7, 0.8 and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich InxGa1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content InxGa1-xN to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less
  • Lattice rotation was observed in different scales in aluminium single crystals fatigued in push-pull in air at room temperature, a constant shear stress amplitude 4 MPa, zero mean stress and frequency of 20 Hz. Using the channelling contrast technique in SEM, contrast of grey and dark bands consistent in dimensions with those of PSBs was observed on the surface sectioned parallel to the Burgers vector b in an Al single crystal after 1.2 {times} 10{sup 6} cycles, suggesting that there was lattice misorientation (rotation or tilt) between PSBs and the matrix in the specimen. It might be caused by localmore » net material movement due to irreversible slip or non-uniform deformation in PSBs. Lattice rotation (about 6) always appeared between a macroband and the matrix relative to the normals of two perpendicular surfaces of the specimens, as a result of net irreversible slip in one direction of b in PSBs. Often more cracks were found in a positive macroband than a negative one. Deformation bands coarser than PSBs and smaller than macrobands were also found on the surface containing b by the scanning acoustic microscope. They deviated slightly from the direction of the PSBs and were probably formed to release the internal stresses between macrobands and the matrix due to macroband formation. The macroband effect is likely a general metallographic characteristic of unidirectional fatigue in planar-slip metal single crystals. The lattice rotation was probably one of the key factors controlling crack initiation and early propagation in the Al single crystals.« less