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Title: Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride

Abstract

Time-dependent cathodoluminescence (CL) and specimen current (SC) are monitored to evaluate trapping behavior and evolution of charge storage. Examination of CL and SC suggests that the near band edge emission in GaN is reduced primarily by the activation of traps upon irradiation, and Gallium vacancies are prime candidates. At the steady state, measurement of the stored charge by empiric-analytical methods suggests that all available traps within the interaction volume have been filled, and that additional charge is being stored interstitially, necessarily beyond the interaction volume. Once established, the space charge region is responsible for the steady state CL emission and, prior to build up, it is responsible for the generation of diffusion currents. Since the non-recombination effects resulting from diffusion currents that develop early on are analogous to those leading to device failure upon aging, this study is fundamental toward a holistic insight into optical properties in GaN.

Authors:
;  [1];  [2];  [3]
  1. School of Electronic Engineering, Bangor University, Gwynedd LL57 1UT (United Kingdom)
  2. Department of Chemistry and Biochemistry, University of the Science, Philadelphia, Pennsylvania 19104 (United States)
  3. Department of Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, Missouri 65409 (United States)
Publication Date:
OSTI Identifier:
22596674
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AGING; CATHODOLUMINESCENCE; CURRENTS; DIFFUSION; FAILURES; GALLIUM; GALLIUM NITRIDES; IRRADIATION; OPTICAL PROPERTIES; RECOMBINATION; SPACE CHARGE; STEADY-STATE CONDITIONS; TIME DEPENDENCE; TRAPS; VACANCIES

Citation Formats

Campo, E. M., E-mail: e.campo@bangor.ac.uk, Hopkins, L., Pophristic, M., and Ferguson, I. T. Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride. United States: N. p., 2016. Web. doi:10.1063/1.4954685.
Campo, E. M., E-mail: e.campo@bangor.ac.uk, Hopkins, L., Pophristic, M., & Ferguson, I. T. Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride. United States. doi:10.1063/1.4954685.
Campo, E. M., E-mail: e.campo@bangor.ac.uk, Hopkins, L., Pophristic, M., and Ferguson, I. T. Tue . "Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride". United States. doi:10.1063/1.4954685.
@article{osti_22596674,
title = {Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride},
author = {Campo, E. M., E-mail: e.campo@bangor.ac.uk and Hopkins, L. and Pophristic, M. and Ferguson, I. T.},
abstractNote = {Time-dependent cathodoluminescence (CL) and specimen current (SC) are monitored to evaluate trapping behavior and evolution of charge storage. Examination of CL and SC suggests that the near band edge emission in GaN is reduced primarily by the activation of traps upon irradiation, and Gallium vacancies are prime candidates. At the steady state, measurement of the stored charge by empiric-analytical methods suggests that all available traps within the interaction volume have been filled, and that additional charge is being stored interstitially, necessarily beyond the interaction volume. Once established, the space charge region is responsible for the steady state CL emission and, prior to build up, it is responsible for the generation of diffusion currents. Since the non-recombination effects resulting from diffusion currents that develop early on are analogous to those leading to device failure upon aging, this study is fundamental toward a holistic insight into optical properties in GaN.},
doi = {10.1063/1.4954685},
journal = {Journal of Applied Physics},
number = 24,
volume = 119,
place = {United States},
year = {Tue Jun 28 00:00:00 EDT 2016},
month = {Tue Jun 28 00:00:00 EDT 2016}
}