Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Journal Article · Tue Jun 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4955063· OSTI ID:22596644

Lin, Chun-Cheng ^[1]; Tang, Jian-Fu; Su, Hsiu-Hsien ^[1]; Hong, Cheng-Shong; Huang, Chih-Yu ^[2]; Chu, Sheng-Yuan ^[1]

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1. Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
2. Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China)

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

• OSTI ID: 22596644
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPLIANCE
DIFFUSION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTROCHEMISTRY
EMISSION
IMPEDANCE
LITHIUM IONS
MEMORY DEVICES
RANDOMNESS
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY
TRANSPORT THEORY
ZINC OXIDES