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Title: Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Abstract

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Authors:
 [1];  [2]; ;  [1]; ;  [3];  [1];  [2]
  1. Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
  2. (China)
  3. Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China)
Publication Date:
OSTI Identifier:
22596644
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPLIANCE; DIFFUSION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; EMISSION; IMPEDANCE; LITHIUM IONS; MEMORY DEVICES; RANDOMNESS; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT THEORY; ZINC OXIDES

Citation Formats

Lin, Chun-Cheng, Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan, Tang, Jian-Fu, Su, Hsiu-Hsien, Hong, Cheng-Shong, Huang, Chih-Yu, Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current. United States: N. p., 2016. Web. doi:10.1063/1.4955063.
Lin, Chun-Cheng, Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan, Tang, Jian-Fu, Su, Hsiu-Hsien, Hong, Cheng-Shong, Huang, Chih-Yu, Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw, & Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current. United States. doi:10.1063/1.4955063.
Lin, Chun-Cheng, Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan, Tang, Jian-Fu, Su, Hsiu-Hsien, Hong, Cheng-Shong, Huang, Chih-Yu, Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan. Tue . "Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current". United States. doi:10.1063/1.4955063.
@article{osti_22596644,
title = {Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current},
author = {Lin, Chun-Cheng and Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan and Tang, Jian-Fu and Su, Hsiu-Hsien and Hong, Cheng-Shong and Huang, Chih-Yu and Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan},
abstractNote = {The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.},
doi = {10.1063/1.4955063},
journal = {Journal of Applied Physics},
number = 24,
volume = 119,
place = {United States},
year = {Tue Jun 28 00:00:00 EDT 2016},
month = {Tue Jun 28 00:00:00 EDT 2016}
}