skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers

Abstract

Highly-ordered, sub-70 nm-MOS-junctions of Au/Ti/TiO{sub x}/p{sup +}-Si were efficiently and reliably fabricated by nanotransfer-printing (nTP) over large areas and their functionality was investigated with respect to their application as MOS-devices. First, we used a temperature-enhanced nTP process and integrated the plasma-oxidation of a nm-thin titanium film being e-beam evaporated directly on the stamp before the printing step without affecting the p{sup +}-Si substrate. Second, morphological investigations (scanning electron microscopy) of the nanostructures confirm the reliable transfer of Au/Ti/TiO{sub x}-pillars of 50 nm, 75 nm, and 100 nm size of superior quality on p{sup +}-Si by our transfer protocol. Third, the fabricated nanodevices are also characterized electrically by conductive AFM. Fourth, the results are compared to probe station measurements on identically processed, i.e., transfer-printed μm-MOS-structures including a systematic investigation of the oxide formation. The jV-characteristics of these MOS-junctions demonstrate the electrical functionality as plasma-grown tunneling oxides and the effectivity of the transfer-printing process for their large-scale fabrication. Next, our findings are supported by fits to the jV-curves of the plasma-grown titanium oxide by kinetic-Monte-Carlo simulations. These fits allowed us to determine the dominant conduction mechanisms, the material parameters of the oxides and, in particular, a calibration of the thickness depending on applied plasma time andmore » power. Finally, also a relative dielectric permittivity of 12 was found for such plasma-grown TiO{sub x}-layers.« less

Authors:
; ; ; ; ;  [1]
  1. Institute for Nanoelectronics, Technische Universität München, Arcisstrasse 21, 80333 München (Germany)
Publication Date:
OSTI Identifier:
22594595
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 14; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CALIBRATION; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; CONNECTORS; DIELECTRIC MATERIALS; ELECTRON BEAMS; GOLD; LAYERS; MICROSTRUCTURE; MONTE CARLO METHOD; NANOSTRUCTURES; OXIDATION; PERMITTIVITY; PLASMA; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; THICKNESS; TITANIUM OXIDES; TUNNEL EFFECT

Citation Formats

Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de, Nagel, Robin, Albes, Tim, Haeberle, Tobias, Gagliardi, Alessio, and Lugli, Paolo. Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers. United States: N. p., 2016. Web. doi:10.1063/1.4946037.
Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de, Nagel, Robin, Albes, Tim, Haeberle, Tobias, Gagliardi, Alessio, & Lugli, Paolo. Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers. United States. doi:10.1063/1.4946037.
Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de, Nagel, Robin, Albes, Tim, Haeberle, Tobias, Gagliardi, Alessio, and Lugli, Paolo. Thu . "Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers". United States. doi:10.1063/1.4946037.
@article{osti_22594595,
title = {Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers},
author = {Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de and Nagel, Robin and Albes, Tim and Haeberle, Tobias and Gagliardi, Alessio and Lugli, Paolo},
abstractNote = {Highly-ordered, sub-70 nm-MOS-junctions of Au/Ti/TiO{sub x}/p{sup +}-Si were efficiently and reliably fabricated by nanotransfer-printing (nTP) over large areas and their functionality was investigated with respect to their application as MOS-devices. First, we used a temperature-enhanced nTP process and integrated the plasma-oxidation of a nm-thin titanium film being e-beam evaporated directly on the stamp before the printing step without affecting the p{sup +}-Si substrate. Second, morphological investigations (scanning electron microscopy) of the nanostructures confirm the reliable transfer of Au/Ti/TiO{sub x}-pillars of 50 nm, 75 nm, and 100 nm size of superior quality on p{sup +}-Si by our transfer protocol. Third, the fabricated nanodevices are also characterized electrically by conductive AFM. Fourth, the results are compared to probe station measurements on identically processed, i.e., transfer-printed μm-MOS-structures including a systematic investigation of the oxide formation. The jV-characteristics of these MOS-junctions demonstrate the electrical functionality as plasma-grown tunneling oxides and the effectivity of the transfer-printing process for their large-scale fabrication. Next, our findings are supported by fits to the jV-curves of the plasma-grown titanium oxide by kinetic-Monte-Carlo simulations. These fits allowed us to determine the dominant conduction mechanisms, the material parameters of the oxides and, in particular, a calibration of the thickness depending on applied plasma time and power. Finally, also a relative dielectric permittivity of 12 was found for such plasma-grown TiO{sub x}-layers.},
doi = {10.1063/1.4946037},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 14,
volume = 119,
place = {United States},
year = {2016},
month = {4}
}