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Title: Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4945036· OSTI ID:22594564
 [1];  [2];  [1]
  1. IMCN/NAPS, Université catholique de Louvain, Louvain-la-Neuve (Belgium)
  2. ICTEAM/ELEN, Université catholique de Louvain, Louvain-la-Neuve (Belgium)

Bi thin films, with a thickness of 100 nm, are deposited by electron-beam evaporation on a freshly cleaved (100) KCl substrate. The substrate temperature during film growth (T{sub dep}) ranges from room temperature up to 170 °C. Films deposited at room temperature exhibit a maze-like microstructure typical of the rhombohedral (110) texture, as confirmed by X-ray diffraction. For T{sub dep} above 80 °C, a different microstructure appears, characterized by concentric triangular shapes corresponding to the trigonal (111) texture. Temperature dependence of the resistivity shows a transition from a semiconductor-like behavior for films deposited at room temperature to a metallic-like behavior for T{sub dep} above 80 °C. From magnetoresistance measurements between room temperature and 1.6 K, we extract the electron and hole mobilities, concentrations, and mean free paths, which allow to draw a complete picture of the transport properties of both types of films.

OSTI ID:
22594564
Journal Information:
Journal of Applied Physics, Vol. 119, Issue 13; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English