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Title: Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles

Abstract

Despite the fact the alloys of wurtzite AlN, GaN, and InN are widely used in electronics, the studies on their thermal conductivities (κ) are inadequate, and the intrinsic limits are still unknown. In this work, the intrinsic κ of alloys and their films are calculated from first-principles within the virtual crystal treatment. The κ of alloys are strongly suppressed even by a small amount of alloying. For instance, with only 1% alloying of Al or In, κ of GaN decreases about 60%. At relatively high alloying, with concentration between 0.2 and 0.8, the κ of alloys are not significantly changed. At room temperature, the minimal a-axis κ are about 18, 22, and 8 W m{sup −1} K{sup −1}, while the minimal c-axis κ are about 22, 27, and 10 W m{sup −1} K{sup −1} for Al{sub x}Ga{sub 1−x}N, In{sub x}Ga{sub 1−x}N, and In{sub x}Al{sub 1−x}N, respectively. The size effect in films can persist up to a few tens of micrometers, and κ can be reduced by half in about 100 nm thick films.

Authors:
;  [1];  [2]
  1. State Key Laboratory of Coal Combustion, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)
  2. Institute for Advanced Study, Shenzhen University, Shenzhen 518060 (China)
Publication Date:
OSTI Identifier:
22594538
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; ALUMINIUM NITRIDES; CONCENTRATION RATIO; CRYSTALS; FILMS; GALLIUM NITRIDES; INDIUM NITRIDES; TEMPERATURE RANGE 0273-0400 K; THERMAL CONDUCTIVITY

Citation Formats

Ma, Jinlong, Luo, Xiaobing, and Li, Wu. Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles. United States: N. p., 2016. Web. doi:10.1063/1.4944809.
Ma, Jinlong, Luo, Xiaobing, & Li, Wu. Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles. United States. https://doi.org/10.1063/1.4944809
Ma, Jinlong, Luo, Xiaobing, and Li, Wu. Mon . "Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles". United States. https://doi.org/10.1063/1.4944809.
@article{osti_22594538,
title = {Intrinsic thermal conductivities and size effect of alloys of wurtzite AlN, GaN, and InN from first-principles},
author = {Ma, Jinlong and Luo, Xiaobing and Li, Wu},
abstractNote = {Despite the fact the alloys of wurtzite AlN, GaN, and InN are widely used in electronics, the studies on their thermal conductivities (κ) are inadequate, and the intrinsic limits are still unknown. In this work, the intrinsic κ of alloys and their films are calculated from first-principles within the virtual crystal treatment. The κ of alloys are strongly suppressed even by a small amount of alloying. For instance, with only 1% alloying of Al or In, κ of GaN decreases about 60%. At relatively high alloying, with concentration between 0.2 and 0.8, the κ of alloys are not significantly changed. At room temperature, the minimal a-axis κ are about 18, 22, and 8 W m{sup −1} K{sup −1}, while the minimal c-axis κ are about 22, 27, and 10 W m{sup −1} K{sup −1} for Al{sub x}Ga{sub 1−x}N, In{sub x}Ga{sub 1−x}N, and In{sub x}Al{sub 1−x}N, respectively. The size effect in films can persist up to a few tens of micrometers, and κ can be reduced by half in about 100 nm thick films.},
doi = {10.1063/1.4944809},
url = {https://www.osti.gov/biblio/22594538}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 119,
place = {United States},
year = {2016},
month = {3}
}