Fabrication and characterization of p{sup +}-i-p{sup +} type organic thin film transistors with electrodes of highly doped polymer

Journal Article · Thu Apr 21 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4946888· OSTI ID:22594498

Tadaki, Daisuke ^[1]; Ma, Teng; Niwano, Michio ^[2]; Zhang, Jinyu; Iino, Shohei ^[2]; Hirano-Iwata, Ayumi ^[1]; Kimura, Yasuo ^[3]; Rosenberg, Richard A. ^[4]

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1. Graduate School of Biomedical Engineering, Tohoku University, Sendai 980-8579 (Japan)
2. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan)
3. CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012 (Japan)
4. Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439 (United States)

Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. In this paper, we have fabricated p{sup +}-i-p{sup +} type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p{sup +}) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F{sub 4}-TCNQ) was used as the p-type dopant. A fabricating method of p{sup +}-i-p{sup +} OTFTs has been developed by using SiO{sub 2} and aluminum films as capping layers for micro-scaled patterning of the p{sup +}-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p{sup +}-i-p{sup +} OTFTs work with carrier injection through a built-in potential at p{sup +}/i interfaces. We found that the p{sup +}-i-p{sup +} OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p{sup +}-P3HT layers.

• OSTI ID: 22594498
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 15; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM
DOPED MATERIALS
ELECTRODES
ELECTRONIC EQUIPMENT
FABRICATION
INJECTION
LAYERS
ORGANIC MATTER
PHOTOELECTRON SPECTROSCOPY
POLYMERS
P-TYPE CONDUCTORS
SILICA
SILICON OXIDES
THIN FILMS
TRANSISTORS