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Title: High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

Abstract

We report on the demonstration of a maximum operating temperature of 142 K for InGaAs-based terahertz quantum cascade lasers. This result is achieved by using the alternative material combination In{sub 0.53}Ga{sub 0.47}As/GaAs{sub 0.51}Sb{sub 0.49}, lattice-matched to InP, which exhibits fabrication advantages over standard In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As due to more suitable material parameters. An active region, based on a three-well phonon depletion design, with improved injection and extraction tunneling coupling, was designed. The devices exhibit threshold current densities of 0.75 kA/cm{sup 2} and provide peak optical powers up to 9 mW. A broad spectral emission range between 3.3 and 4 THz is measured.

Authors:
; ; ;  [1]; ; ; ; ;  [2]
  1. Photonics Institute and Center for Micro- and Nanostructures, Technische Universität Wien, Gusshausstrasse 27-29, 1040 Vienna (Austria)
  2. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Technische Universität Wien, Floragasse 7, 1040 Vienna (Austria)
Publication Date:
OSTI Identifier:
22594495
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 21; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; CURRENT DENSITY; FABRICATION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASERS; PERFORMANCE; PHONONS; TEMPERATURE RANGE 0065-0273 K; THRESHOLD CURRENT; TUNNEL EFFECT

Citation Formats

Deutsch, C., E-mail: christoph.deutsch@tuwien.ac.at, Krall, M., Brandstetter, M., Unterrainer, K., Detz, H., Andrews, A. M., Klang, P., Schrenk, W., and Strasser, G. High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K. United States: N. p., 2012. Web. doi:10.1063/1.4766915.
Deutsch, C., E-mail: christoph.deutsch@tuwien.ac.at, Krall, M., Brandstetter, M., Unterrainer, K., Detz, H., Andrews, A. M., Klang, P., Schrenk, W., & Strasser, G. High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K. United States. doi:10.1063/1.4766915.
Deutsch, C., E-mail: christoph.deutsch@tuwien.ac.at, Krall, M., Brandstetter, M., Unterrainer, K., Detz, H., Andrews, A. M., Klang, P., Schrenk, W., and Strasser, G. Mon . "High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K". United States. doi:10.1063/1.4766915.
@article{osti_22594495,
title = {High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K},
author = {Deutsch, C., E-mail: christoph.deutsch@tuwien.ac.at and Krall, M. and Brandstetter, M. and Unterrainer, K. and Detz, H. and Andrews, A. M. and Klang, P. and Schrenk, W. and Strasser, G.},
abstractNote = {We report on the demonstration of a maximum operating temperature of 142 K for InGaAs-based terahertz quantum cascade lasers. This result is achieved by using the alternative material combination In{sub 0.53}Ga{sub 0.47}As/GaAs{sub 0.51}Sb{sub 0.49}, lattice-matched to InP, which exhibits fabrication advantages over standard In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As due to more suitable material parameters. An active region, based on a three-well phonon depletion design, with improved injection and extraction tunneling coupling, was designed. The devices exhibit threshold current densities of 0.75 kA/cm{sup 2} and provide peak optical powers up to 9 mW. A broad spectral emission range between 3.3 and 4 THz is measured.},
doi = {10.1063/1.4766915},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 101,
place = {United States},
year = {2012},
month = {11}
}