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Title: Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures

Abstract

A detailed study of the small-signal response of III-Nitride quantum well (QW) light-emitting diodes is presented, in which the electrical and optical responses are simultaneously measured. A complete transport-recombination model is introduced to account for measurements. This allows for a proper evaluation of the recombination lifetime and for the accurate quantification of thermionic carrier escape from the QW. Further, a yet-unreported carrier capture mechanism is identified and quantified; it increases with the carrier density in the QW and bears the signature of a Coulomb in-scattering process.

Authors:
; ; ;  [1]
  1. Soraa, Inc., 6500 Kaiser Dr., Fremont, California 94555 (United States)
Publication Date:
OSTI Identifier:
22594482
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPTURE; CARRIER DENSITY; CARRIERS; COULOMB SCATTERING; LIGHT EMITTING DIODES; QUANTUM WELLS; RECOMBINATION; SIGNALS

Citation Formats

David, Aurelien, E-mail: adavid@soraa.com, Hurni, Christophe A., Young, Nathan G., and Craven, Michael D. Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures. United States: N. p., 2016. Web. doi:10.1063/1.4959143.
David, Aurelien, E-mail: adavid@soraa.com, Hurni, Christophe A., Young, Nathan G., & Craven, Michael D. Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures. United States. doi:10.1063/1.4959143.
David, Aurelien, E-mail: adavid@soraa.com, Hurni, Christophe A., Young, Nathan G., and Craven, Michael D. Mon . "Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures". United States. doi:10.1063/1.4959143.
@article{osti_22594482,
title = {Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures},
author = {David, Aurelien, E-mail: adavid@soraa.com and Hurni, Christophe A. and Young, Nathan G. and Craven, Michael D.},
abstractNote = {A detailed study of the small-signal response of III-Nitride quantum well (QW) light-emitting diodes is presented, in which the electrical and optical responses are simultaneously measured. A complete transport-recombination model is introduced to account for measurements. This allows for a proper evaluation of the recombination lifetime and for the accurate quantification of thermionic carrier escape from the QW. Further, a yet-unreported carrier capture mechanism is identified and quantified; it increases with the carrier density in the QW and bears the signature of a Coulomb in-scattering process.},
doi = {10.1063/1.4959143},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = {Mon Jul 18 00:00:00 EDT 2016},
month = {Mon Jul 18 00:00:00 EDT 2016}
}