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Title: Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

Abstract

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

Authors:
; ; ; ; ; ; ;  [1];  [1];  [2]
  1. Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22594481
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CRYSTALS; DEPOSITION; DIAMONDS; HOLES; HYDROGEN; LAYERS; METALS; MODULATION; MOSFET; SEMICONDUCTOR MATERIALS; SURFACES; TWO-DIMENSIONAL CALCULATIONS; WALLS

Citation Formats

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp, Muta, Tsubasa, Kobayashi, Mikinori, Saito, Toshiki, Shibata, Masanobu, Matsumura, Daisuke, Kudo, Takuya, Hiraiwa, Atsushi, Kawarada, Hiroshi, and Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate. United States: N. p., 2016. Web. doi:10.1063/1.4958889.
Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp, Muta, Tsubasa, Kobayashi, Mikinori, Saito, Toshiki, Shibata, Masanobu, Matsumura, Daisuke, Kudo, Takuya, Hiraiwa, Atsushi, Kawarada, Hiroshi, & Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate. United States. doi:10.1063/1.4958889.
Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp, Muta, Tsubasa, Kobayashi, Mikinori, Saito, Toshiki, Shibata, Masanobu, Matsumura, Daisuke, Kudo, Takuya, Hiraiwa, Atsushi, Kawarada, Hiroshi, and Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051. Mon . "Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate". United States. doi:10.1063/1.4958889.
@article{osti_22594481,
title = {Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate},
author = {Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp and Muta, Tsubasa and Kobayashi, Mikinori and Saito, Toshiki and Shibata, Masanobu and Matsumura, Daisuke and Kudo, Takuya and Hiraiwa, Atsushi and Kawarada, Hiroshi and Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051},
abstractNote = {The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.},
doi = {10.1063/1.4958889},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = {Mon Jul 18 00:00:00 EDT 2016},
month = {Mon Jul 18 00:00:00 EDT 2016}
}