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Title: On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes

Abstract

While there have been many discussions on the standard Si pn-diodes, little attention has been paid and confusion still arises on the ideality factor of the radiative recombination current in semiconductor light-emitting diodes (LEDs). In this letter, we theoretically demonstrate and experimentally confirm by using blue and infrared semiconductor LEDs that the ideality factor of the radiative recombination current is unity especially for low-current-density ranges. We utilize the data of internal quantum efficiency measured by the temperature-dependent electroluminescence to separate the radiative current component from the total current.

Authors:
 [1];  [2];  [1];  [3]
  1. Department of Bionanotechnology, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
  2. Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
  3. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22594462
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENT DENSITY; CURRENTS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON DIODES; TEMPERATURE DEPENDENCE

Citation Formats

Lee, Gyeong Won, Shim, Jong-In, Shin, Dong-Soo, E-mail: dshin@hanyang.ac.kr, and Department of Applied Physics, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791. On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes. United States: N. p., 2016. Web. doi:10.1063/1.4959081.
Lee, Gyeong Won, Shim, Jong-In, Shin, Dong-Soo, E-mail: dshin@hanyang.ac.kr, & Department of Applied Physics, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791. On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes. United States. doi:10.1063/1.4959081.
Lee, Gyeong Won, Shim, Jong-In, Shin, Dong-Soo, E-mail: dshin@hanyang.ac.kr, and Department of Applied Physics, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791. Mon . "On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes". United States. doi:10.1063/1.4959081.
@article{osti_22594462,
title = {On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes},
author = {Lee, Gyeong Won and Shim, Jong-In and Shin, Dong-Soo, E-mail: dshin@hanyang.ac.kr and Department of Applied Physics, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791},
abstractNote = {While there have been many discussions on the standard Si pn-diodes, little attention has been paid and confusion still arises on the ideality factor of the radiative recombination current in semiconductor light-emitting diodes (LEDs). In this letter, we theoretically demonstrate and experimentally confirm by using blue and infrared semiconductor LEDs that the ideality factor of the radiative recombination current is unity especially for low-current-density ranges. We utilize the data of internal quantum efficiency measured by the temperature-dependent electroluminescence to separate the radiative current component from the total current.},
doi = {10.1063/1.4959081},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = {Mon Jul 18 00:00:00 EDT 2016},
month = {Mon Jul 18 00:00:00 EDT 2016}
}