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Title: On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film

Abstract

Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg{sub 2}Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg{sub 2}Si.

Authors:
; ;  [1];  [2];  [2];  [3];  [4];  [1];  [5]
  1. Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation)
  2. Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic)
  3. (Czech Republic)
  4. Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojová 135, 165 02 Praha 6 (Czech Republic)
  5. (Russian Federation)
Publication Date:
OSTI Identifier:
22594453
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ELECTRONS; ENERGY LOSSES; EPITAXY; MAGNESIUM; MAGNESIUM SILICIDES; MATRICES; OPTICAL PROPERTIES; PHOTONS; RAMAN SPECTROSCOPY; SILICON; THIN FILMS; X RADIATION

Citation Formats

Chernev, I. M., E-mail: igor-chernev7@mail.ru, Shevlyagin, A. V., Galkin, K. N., Stuchlik, J., Remes, Z., FBE CTU, Nam. Sitna 3105, 272 01 Kladno, Fajgar, R., Galkin, N. G., and Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film. United States: N. p., 2016. Web. doi:10.1063/1.4960011.
Chernev, I. M., E-mail: igor-chernev7@mail.ru, Shevlyagin, A. V., Galkin, K. N., Stuchlik, J., Remes, Z., FBE CTU, Nam. Sitna 3105, 272 01 Kladno, Fajgar, R., Galkin, N. G., & Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film. United States. doi:10.1063/1.4960011.
Chernev, I. M., E-mail: igor-chernev7@mail.ru, Shevlyagin, A. V., Galkin, K. N., Stuchlik, J., Remes, Z., FBE CTU, Nam. Sitna 3105, 272 01 Kladno, Fajgar, R., Galkin, N. G., and Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok. Mon . "On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film". United States. doi:10.1063/1.4960011.
@article{osti_22594453,
title = {On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film},
author = {Chernev, I. M., E-mail: igor-chernev7@mail.ru and Shevlyagin, A. V. and Galkin, K. N. and Stuchlik, J. and Remes, Z. and FBE CTU, Nam. Sitna 3105, 272 01 Kladno and Fajgar, R. and Galkin, N. G. and Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok},
abstractNote = {Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg{sub 2}Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg{sub 2}Si.},
doi = {10.1063/1.4960011},
journal = {Applied Physics Letters},
number = 4,
volume = 109,
place = {United States},
year = {Mon Jul 25 00:00:00 EDT 2016},
month = {Mon Jul 25 00:00:00 EDT 2016}
}