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Title: Time-resolved analysis of the white photoluminescence from chemically synthesized SiC{sub x}O{sub y} thin films and nanowires

Abstract

The study reported herein presents results on the room-temperature photoluminescence (PL) dynamics of chemically synthesized SiC{sub x}O{sub y≤1.6} (0.19 < x < 0.6) thin films and corresponding nanowire (NW) arrays. The PL decay transients of the SiC{sub x}O{sub y} films/NWs are characterized by fast luminescence decay lifetimes that span in the range of 350–950 ps, as determined from their deconvoluted PL decay spectra and their stretched-exponential recombination behavior. Complementary steady-state PL emission peak position studies for SiC{sub x}O{sub y} thin films with varying C content showed similar characteristics pertaining to the variation of their emission peak position with respect to the excitation photon energy. A nearly monotonic increase in the PL energy emission peak, before reaching an energy plateau, was observed with increasing excitation energy. This behavior suggests that band-tail states, related to C-Si/Si-O-C bonding, play a prominent role in the recombination of photo-generated carriers in SiC{sub x}O{sub y}. Furthermore, the PL lifetime behavior of the SiC{sub x}O{sub y} thin films and their NWs was analyzed with respect to their luminescence emission energy. An emission-energy-dependent lifetime was observed, as a result of the modulation of their band-tail states statistics with varying C content and with the reduced dimensionality of the NWs.

Authors:
; ; ; ; ;  [1]
  1. Colleges of Nanoscale Sciences and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22594448
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BONDING; CARRIERS; DECAY; ENERGY DEPENDENCE; EXCITATION; LIFETIME; MODULATION; NANOWIRES; PEAKS; PHOTOLUMINESCENCE; PHOTONS; RECOMBINATION; SILICON CARBIDES; SPECTRA; STATISTICS; STEADY-STATE CONDITIONS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIME RESOLUTION

Citation Formats

Tabassum, Natasha, Nikas, Vasileios, Ford, Brian, Huang, Mengbing, Kaloyeros, Alain E., and Gallis, Spyros, E-mail: sgalis@sunypoly.edu. Time-resolved analysis of the white photoluminescence from chemically synthesized SiC{sub x}O{sub y} thin films and nanowires. United States: N. p., 2016. Web. doi:10.1063/1.4959834.
Tabassum, Natasha, Nikas, Vasileios, Ford, Brian, Huang, Mengbing, Kaloyeros, Alain E., & Gallis, Spyros, E-mail: sgalis@sunypoly.edu. Time-resolved analysis of the white photoluminescence from chemically synthesized SiC{sub x}O{sub y} thin films and nanowires. United States. doi:10.1063/1.4959834.
Tabassum, Natasha, Nikas, Vasileios, Ford, Brian, Huang, Mengbing, Kaloyeros, Alain E., and Gallis, Spyros, E-mail: sgalis@sunypoly.edu. Mon . "Time-resolved analysis of the white photoluminescence from chemically synthesized SiC{sub x}O{sub y} thin films and nanowires". United States. doi:10.1063/1.4959834.
@article{osti_22594448,
title = {Time-resolved analysis of the white photoluminescence from chemically synthesized SiC{sub x}O{sub y} thin films and nanowires},
author = {Tabassum, Natasha and Nikas, Vasileios and Ford, Brian and Huang, Mengbing and Kaloyeros, Alain E. and Gallis, Spyros, E-mail: sgalis@sunypoly.edu},
abstractNote = {The study reported herein presents results on the room-temperature photoluminescence (PL) dynamics of chemically synthesized SiC{sub x}O{sub y≤1.6} (0.19 < x < 0.6) thin films and corresponding nanowire (NW) arrays. The PL decay transients of the SiC{sub x}O{sub y} films/NWs are characterized by fast luminescence decay lifetimes that span in the range of 350–950 ps, as determined from their deconvoluted PL decay spectra and their stretched-exponential recombination behavior. Complementary steady-state PL emission peak position studies for SiC{sub x}O{sub y} thin films with varying C content showed similar characteristics pertaining to the variation of their emission peak position with respect to the excitation photon energy. A nearly monotonic increase in the PL energy emission peak, before reaching an energy plateau, was observed with increasing excitation energy. This behavior suggests that band-tail states, related to C-Si/Si-O-C bonding, play a prominent role in the recombination of photo-generated carriers in SiC{sub x}O{sub y}. Furthermore, the PL lifetime behavior of the SiC{sub x}O{sub y} thin films and their NWs was analyzed with respect to their luminescence emission energy. An emission-energy-dependent lifetime was observed, as a result of the modulation of their band-tail states statistics with varying C content and with the reduced dimensionality of the NWs.},
doi = {10.1063/1.4959834},
journal = {Applied Physics Letters},
number = 4,
volume = 109,
place = {United States},
year = {Mon Jul 25 00:00:00 EDT 2016},
month = {Mon Jul 25 00:00:00 EDT 2016}
}