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Title: In situ surface and interface study of crystalline (3×1)-O on InAs

Abstract

The oxidation behavior of de-capped InAs (100) exposed to O{sub 2} gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290–330 °C with a coexistence of In{sub 2}O and As{sub 2}O{sub 3}. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO{sub 2} is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO{sub 2} growth at 100 °C.

Authors:
;  [1]; ;  [2]
  1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, Texas 78754 (United States)
Publication Date:
OSTI Identifier:
22594434
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENATES; ARSENIC OXIDES; CHEMICAL STATE; DEPOSITION; ELECTRON DIFFRACTION; HAFNIUM OXIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; MONOCHROMATIC RADIATION; OXIDATION; RESOLUTION; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0400-1000 K; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Qin, Xiaoye, E-mail: xxq102020@utdallas.edu, Wallace, Robert M., E-mail: rmwallace@utdallas.edu, Wang, Wei-E., and Rodder, Mark S. In situ surface and interface study of crystalline (3×1)-O on InAs. United States: N. p., 2016. Web. doi:10.1063/1.4959940.
Qin, Xiaoye, E-mail: xxq102020@utdallas.edu, Wallace, Robert M., E-mail: rmwallace@utdallas.edu, Wang, Wei-E., & Rodder, Mark S. In situ surface and interface study of crystalline (3×1)-O on InAs. United States. doi:10.1063/1.4959940.
Qin, Xiaoye, E-mail: xxq102020@utdallas.edu, Wallace, Robert M., E-mail: rmwallace@utdallas.edu, Wang, Wei-E., and Rodder, Mark S. Mon . "In situ surface and interface study of crystalline (3×1)-O on InAs". United States. doi:10.1063/1.4959940.
@article{osti_22594434,
title = {In situ surface and interface study of crystalline (3×1)-O on InAs},
author = {Qin, Xiaoye, E-mail: xxq102020@utdallas.edu and Wallace, Robert M., E-mail: rmwallace@utdallas.edu and Wang, Wei-E. and Rodder, Mark S.},
abstractNote = {The oxidation behavior of de-capped InAs (100) exposed to O{sub 2} gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290–330 °C with a coexistence of In{sub 2}O and As{sub 2}O{sub 3}. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO{sub 2} is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO{sub 2} growth at 100 °C.},
doi = {10.1063/1.4959940},
journal = {Applied Physics Letters},
number = 4,
volume = 109,
place = {United States},
year = {Mon Jul 25 00:00:00 EDT 2016},
month = {Mon Jul 25 00:00:00 EDT 2016}
}