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Title: Intrinsic radiation tolerance of ultra-thin GaAs solar cells

Abstract

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.

Authors:
; ; ; ; ;  [1];  [2]
  1. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington, D.C. 20375 (United States)
  2. Sotera Defense Solutions, Inc., Annapolis Junction, Maryland 20701-1067 (United States)
Publication Date:
OSTI Identifier:
22594430
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 3; Other Information: (c) 2016 U.S. Government; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; GALLIUM ARSENIDE SOLAR CELLS; GEOMETRY; IRRADIATION; LAYERS; MEV RANGE 01-10; PHOTOVOLTAIC EFFECT; PROTONS; THICKNESS; TOLERANCE

Citation Formats

Hirst, L. C., Yakes, M. K., Warner, J. H., Schmieder, K. J., Walters, R. J., Jenkins, P. P., and Bennett, M. F.. Intrinsic radiation tolerance of ultra-thin GaAs solar cells. United States: N. p., 2016. Web. doi:10.1063/1.4959784.
Hirst, L. C., Yakes, M. K., Warner, J. H., Schmieder, K. J., Walters, R. J., Jenkins, P. P., & Bennett, M. F.. Intrinsic radiation tolerance of ultra-thin GaAs solar cells. United States. doi:10.1063/1.4959784.
Hirst, L. C., Yakes, M. K., Warner, J. H., Schmieder, K. J., Walters, R. J., Jenkins, P. P., and Bennett, M. F.. 2016. "Intrinsic radiation tolerance of ultra-thin GaAs solar cells". United States. doi:10.1063/1.4959784.
@article{osti_22594430,
title = {Intrinsic radiation tolerance of ultra-thin GaAs solar cells},
author = {Hirst, L. C. and Yakes, M. K. and Warner, J. H. and Schmieder, K. J. and Walters, R. J. and Jenkins, P. P. and Bennett, M. F.},
abstractNote = {Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.},
doi = {10.1063/1.4959784},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = 2016,
month = 7
}
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