skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

Abstract

We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y{sub 3}Fe{sub 5}O{sub 12} (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.

Authors:
; ; ; ; ; ; ; ; ; ;  [1];  [2];  [3]
  1. Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China)
  2. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583 (Singapore)
  3. Department of Physics, University of Arizona, Tucson, Arizona 85721 (United States)
Publication Date:
OSTI Identifier:
22594424
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; ANTIFERROMAGNETISM; COMPARATIVE EVALUATIONS; CURRENTS; FERRITE GARNETS; FLUCTUATIONS; IRON OXIDES; LAYERS; MAGNETIZATION; MAGNETORESISTANCE; NICKEL OXIDES; PROXIMITY EFFECT; SIGNALS; SPIN; TEMPERATURE RANGE; THIN FILMS; YTTRIUM COMPOUNDS

Citation Formats

Shang, T., Zhan, Q. F., E-mail: zhanqf@nimte.ac.cn, Yang, H. L., Zuo, Z. H., Xie, Y. L., Liu, L. P., Zhang, S. L., Zhang, Y., Li, H. H., Wang, B. M., Li, Run-Wei, E-mail: runweili@nimte.ac.cn, Wu, Y. H., and Zhang, S., E-mail: zhangshu@email.arizona.edu. Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures. United States: N. p., 2016. Web. doi:10.1063/1.4959573.
Shang, T., Zhan, Q. F., E-mail: zhanqf@nimte.ac.cn, Yang, H. L., Zuo, Z. H., Xie, Y. L., Liu, L. P., Zhang, S. L., Zhang, Y., Li, H. H., Wang, B. M., Li, Run-Wei, E-mail: runweili@nimte.ac.cn, Wu, Y. H., & Zhang, S., E-mail: zhangshu@email.arizona.edu. Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures. United States. doi:10.1063/1.4959573.
Shang, T., Zhan, Q. F., E-mail: zhanqf@nimte.ac.cn, Yang, H. L., Zuo, Z. H., Xie, Y. L., Liu, L. P., Zhang, S. L., Zhang, Y., Li, H. H., Wang, B. M., Li, Run-Wei, E-mail: runweili@nimte.ac.cn, Wu, Y. H., and Zhang, S., E-mail: zhangshu@email.arizona.edu. 2016. "Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures". United States. doi:10.1063/1.4959573.
@article{osti_22594424,
title = {Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures},
author = {Shang, T. and Zhan, Q. F., E-mail: zhanqf@nimte.ac.cn and Yang, H. L. and Zuo, Z. H. and Xie, Y. L. and Liu, L. P. and Zhang, S. L. and Zhang, Y. and Li, H. H. and Wang, B. M. and Li, Run-Wei, E-mail: runweili@nimte.ac.cn and Wu, Y. H. and Zhang, S., E-mail: zhangshu@email.arizona.edu},
abstractNote = {We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y{sub 3}Fe{sub 5}O{sub 12} (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.},
doi = {10.1063/1.4959573},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = 2016,
month = 7
}
  • Spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) are observed simultaneously in the Pt/Y{sub 3}Fe{sub 5}O{sub 12} hybrid structure when thermal gradient is produced by Joule heating. According to their dependences on applied current, these two effects can be separated. Their dependence on heating power and magnetic field is systematically studied. With the increase of heating power, the SSE enhances linearly, whereas the SMR decreases slowly. The origin of the spin currents is further analyzed. The heating power dependences of the spin currents associated with the SSE and the SMR are found to be different.
  • Magnetoresistance (MR) and planar Hall effect (PHE) in spin valves were simultaneously measured in fields applied at different angles ({alpha}) in the film plane with respect to the easy axis of the free layer. MR curve measurements showed that the MR response to the field was linear in the {alpha} angle range from {+-}60{degree} to {+-}120{degree}. However, it was found that when the applied field was near perpendicular to the easy axis of the free layer, PHE curves were nonsymmetrical on both sides of the axis along the sample height. The Boltzmann transport equation was used to simulate the MRmore » and PHE curves and determine magnetization orientation of the free layer. Results showed that the nonsymmetrical PHE curves originated from the interaction of the interlayer exchange coupling field between the pinned and free layers. Consequently, the magnetization reversal was a coherent rotation when the applied field angle {alpha}{gt}90{degree} and incoherent when {alpha}{lt}90{degree}. {copyright} 2001 American Institute of Physics.« less
  • AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm{sup 2}/V s to greater than 1450 cm{sup 2}/V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleationmore » layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities.« less