Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer

Journal Article · Mon Jul 18 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4959144· OSTI ID:22594423

Kasai, S. ^[1]; Takahashi, Y. K.; Ohkubo, T. ^[1]; Cheng, P. -H.; Ikhtiar,; Mitani, S.; Hono, K. ^[1]; Kondou, K. ^[2]; Otani, Y. ^[2]

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1. Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
2. Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan)

We investigated the structure and magneto-transport properties of magnetic junctions using a Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy as ferromagnetic electrodes and a Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm{sup 2}. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

• OSTI ID: 22594423
• Journal Information: Applied Physics Letters, Vol. 109, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOPYRITE
ELECTRODES
EPITAXY
HEUSLER ALLOYS
LAYERS
MAGNETORESISTANCE
SEMICONDUCTOR MATERIALS
SPACERS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT