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Title: Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer

Abstract

We investigated the structure and magneto-transport properties of magnetic junctions using a Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy as ferromagnetic electrodes and a Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm{sup 2}. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

Authors:
 [1];  [2]; ;  [1]; ; ; ;  [1];  [2];  [3];  [3];  [2]
  1. Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
  2. (Japan)
  3. Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan)
Publication Date:
OSTI Identifier:
22594423
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHALCOPYRITE; ELECTRODES; EPITAXY; HEUSLER ALLOYS; LAYERS; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS; SPACERS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT

Citation Formats

Kasai, S., Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Takahashi, Y. K., Ohkubo, T., Cheng, P.-H., Ikhtiar,, Mitani, S., Hono, K., Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Kondou, K., Otani, Y., and Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer. United States: N. p., 2016. Web. doi:10.1063/1.4959144.
Kasai, S., Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Takahashi, Y. K., Ohkubo, T., Cheng, P.-H., Ikhtiar,, Mitani, S., Hono, K., Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Kondou, K., Otani, Y., & Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer. United States. doi:10.1063/1.4959144.
Kasai, S., Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Takahashi, Y. K., Ohkubo, T., Cheng, P.-H., Ikhtiar,, Mitani, S., Hono, K., Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Kondou, K., Otani, Y., and Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581. Mon . "Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer". United States. doi:10.1063/1.4959144.
@article{osti_22594423,
title = {Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer},
author = {Kasai, S. and Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 and Takahashi, Y. K. and Ohkubo, T. and Cheng, P.-H. and Ikhtiar, and Mitani, S. and Hono, K. and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577 and Kondou, K. and Otani, Y. and Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581},
abstractNote = {We investigated the structure and magneto-transport properties of magnetic junctions using a Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy as ferromagnetic electrodes and a Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm{sup 2}. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.},
doi = {10.1063/1.4959144},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = {Mon Jul 18 00:00:00 EDT 2016},
month = {Mon Jul 18 00:00:00 EDT 2016}
}