skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: GaAsP solar cells on GaP/Si with low threading dislocation density

Abstract

GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10{sup 8} cm{sup −2} in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10{sup 6} cm{sup −2} in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

Authors:
; ;  [1];  [1];  [2]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22594422
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; DISLOCATIONS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; KNOWLEDGE BASE; QUANTUM EFFICIENCY; SILICON; SOLAR CELLS

Citation Formats

Yaung, Kevin Nay, Vaisman, Michelle, Lang, Jordan, Lee, Minjoo Larry, E-mail: mllee@illinois.edu, and Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801. GaAsP solar cells on GaP/Si with low threading dislocation density. United States: N. p., 2016. Web. doi:10.1063/1.4959825.
Yaung, Kevin Nay, Vaisman, Michelle, Lang, Jordan, Lee, Minjoo Larry, E-mail: mllee@illinois.edu, & Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801. GaAsP solar cells on GaP/Si with low threading dislocation density. United States. doi:10.1063/1.4959825.
Yaung, Kevin Nay, Vaisman, Michelle, Lang, Jordan, Lee, Minjoo Larry, E-mail: mllee@illinois.edu, and Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801. 2016. "GaAsP solar cells on GaP/Si with low threading dislocation density". United States. doi:10.1063/1.4959825.
@article{osti_22594422,
title = {GaAsP solar cells on GaP/Si with low threading dislocation density},
author = {Yaung, Kevin Nay and Vaisman, Michelle and Lang, Jordan and Lee, Minjoo Larry, E-mail: mllee@illinois.edu and Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801},
abstractNote = {GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10{sup 8} cm{sup −2} in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10{sup 6} cm{sup −2} in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.},
doi = {10.1063/1.4959825},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = 2016,
month = 7
}