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Title: Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions

Abstract

A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.

Authors:
; ;  [1]; ;  [2];  [3]
  1. Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China)
  3. Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan (China)
Publication Date:
OSTI Identifier:
22594402
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALIGNMENT; CARRIERS; ELECTRIC FIELDS; ELECTRODES; ELECTRONS; GRAPHENE; HOLES; JOINTS; LAYERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SILICON; ZINC OXIDES

Citation Formats

Cheng, Ching-Cheng, Liao, Yu-Ming, Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw, Zhan, Jun-Yu, Lin, Tai-Yuan, and Hsieh, Ya-Ping. Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions. United States: N. p., 2016. Web. doi:10.1063/1.4960357.
Cheng, Ching-Cheng, Liao, Yu-Ming, Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw, Zhan, Jun-Yu, Lin, Tai-Yuan, & Hsieh, Ya-Ping. Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions. United States. doi:10.1063/1.4960357.
Cheng, Ching-Cheng, Liao, Yu-Ming, Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw, Zhan, Jun-Yu, Lin, Tai-Yuan, and Hsieh, Ya-Ping. 2016. "Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions". United States. doi:10.1063/1.4960357.
@article{osti_22594402,
title = {Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions},
author = {Cheng, Ching-Cheng and Liao, Yu-Ming and Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw and Zhan, Jun-Yu and Lin, Tai-Yuan and Hsieh, Ya-Ping},
abstractNote = {A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.},
doi = {10.1063/1.4960357},
journal = {Applied Physics Letters},
number = 5,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
  • We report photovoltaic response of highly transparent graphene/BiFe{sub 0.95}Si{sub 0.05}O{sub 3} (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I{sub SC} 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V{sub OC} ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I{sub SC} of 0.63 mA and V{sub OC} of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I{sub SC} and V{sub OC} with quick switching (<100 ms) for 20 consecutive cycles andmore » stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.« less
  • Ultraviolet photodetectors (PDs) have been fabricated from p-ZnO:(Li,N)/n-ZnO structures in this Letter. The PDs can operate without any external power supply and show response only to a very narrow spectrum range. The self-power character of the devices is due to the built-in electric field in the p-n junctions that can separate the photogenerated electrons and holes while the high spectrum-selectivity has been attributed to the filter effect of the neutral region in the ZnO:(Li,N) layer. The performance of the self-powered highly spectrum-selective PDs degrades little after five months, indicating their good reliability.
  • A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either frontside or backside. Morphology, structural, chemical, and optical properties of sputtered NiO and ZnO films were also investigated.