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Title: Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions

Abstract

A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.

Authors:
; ;  [1]; ;  [2];  [3]
  1. Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China)
  3. Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan (China)
Publication Date:
OSTI Identifier:
22594402
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALIGNMENT; CARRIERS; ELECTRIC FIELDS; ELECTRODES; ELECTRONS; GRAPHENE; HOLES; JOINTS; LAYERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SILICON; ZINC OXIDES

Citation Formats

Cheng, Ching-Cheng, Liao, Yu-Ming, Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw, Zhan, Jun-Yu, Lin, Tai-Yuan, and Hsieh, Ya-Ping. Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions. United States: N. p., 2016. Web. doi:10.1063/1.4960357.
Cheng, Ching-Cheng, Liao, Yu-Ming, Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw, Zhan, Jun-Yu, Lin, Tai-Yuan, & Hsieh, Ya-Ping. Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions. United States. doi:10.1063/1.4960357.
Cheng, Ching-Cheng, Liao, Yu-Ming, Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw, Zhan, Jun-Yu, Lin, Tai-Yuan, and Hsieh, Ya-Ping. Mon . "Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions". United States. doi:10.1063/1.4960357.
@article{osti_22594402,
title = {Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions},
author = {Cheng, Ching-Cheng and Liao, Yu-Ming and Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw and Zhan, Jun-Yu and Lin, Tai-Yuan and Hsieh, Ya-Ping},
abstractNote = {A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.},
doi = {10.1063/1.4960357},
journal = {Applied Physics Letters},
number = 5,
volume = 109,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 2016},
month = {Mon Aug 01 00:00:00 EDT 2016}
}