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Title: Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Abstract

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO{sub 2} substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ{sub ST} ∼ 2.3 meV, a strong spin-orbit interaction of Δ{sub SO} ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

Authors:
; ;  [1]; ;  [2];  [1];  [3]
  1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)
  2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  3. (Sweden)
Publication Date:
OSTI Identifier:
22594400
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FINGERS; INDIUM ARSENIDES; LANDE FACTOR; L-S COUPLING; MEV RANGE; MONOCRYSTALS; NANOWIRES; QUANTUM DOTS; QUANTUM INFORMATION; SEMICONDUCTOR MATERIALS; SILICA; SILICON OXIDES; SPIN; SUBSTRATES; TRIPLETS

Citation Formats

Wang, Jiyin, Huang, Shaoyun, E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn, Lei, Zijin, Pan, Dong, Zhao, Jianhua, Xu, H. Q., E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn, and Division of Solid State Physics, Lund University, Box 118, S-22100 Lund. Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime. United States: N. p., 2016. Web. doi:10.1063/1.4960464.
Wang, Jiyin, Huang, Shaoyun, E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn, Lei, Zijin, Pan, Dong, Zhao, Jianhua, Xu, H. Q., E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn, & Division of Solid State Physics, Lund University, Box 118, S-22100 Lund. Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime. United States. doi:10.1063/1.4960464.
Wang, Jiyin, Huang, Shaoyun, E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn, Lei, Zijin, Pan, Dong, Zhao, Jianhua, Xu, H. Q., E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn, and Division of Solid State Physics, Lund University, Box 118, S-22100 Lund. 2016. "Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime". United States. doi:10.1063/1.4960464.
@article{osti_22594400,
title = {Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime},
author = {Wang, Jiyin and Huang, Shaoyun, E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn and Lei, Zijin and Pan, Dong and Zhao, Jianhua and Xu, H. Q., E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn and Division of Solid State Physics, Lund University, Box 118, S-22100 Lund},
abstractNote = {We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO{sub 2} substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ{sub ST} ∼ 2.3 meV, a strong spin-orbit interaction of Δ{sub SO} ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.},
doi = {10.1063/1.4960464},
journal = {Applied Physics Letters},
number = 5,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
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