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Title: Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

Abstract

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Authors:
; ; ;  [1];  [1];  [2];  [1];  [3]; ;  [1];  [4]
  1. CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain)
  2. (Germany)
  3. (China)
  4. (Spain)
Publication Date:
OSTI Identifier:
22594395
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BUILDUP; CALCULATION METHODS; CAPACITANCE; CAPACITORS; COUPLING; EQUIVALENT CIRCUITS; INTERFACES; MAGNETIC TUNNEL JUNCTIONS; PENETRATION DEPTH; RESISTORS; SPIN; SPIN ORIENTATION; VOLATILITY

Citation Formats

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, Ribeiro, Mário, Atxabal, Ainhoa, Llopis, Roger, Bedoya-Pinto, Amilcar, Max Planck Institute of Microstructure Physics, D-06120 Halle, Sun, Xiangnan, National Center for Nanoscience and Technology, 100190 Beijing, Casanova, Fèlix, Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, and IKERBASQUE, Basque Foundation for Science, 48011 Bilbao. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions. United States: N. p., 2016. Web. doi:10.1063/1.4960202.
Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, Ribeiro, Mário, Atxabal, Ainhoa, Llopis, Roger, Bedoya-Pinto, Amilcar, Max Planck Institute of Microstructure Physics, D-06120 Halle, Sun, Xiangnan, National Center for Nanoscience and Technology, 100190 Beijing, Casanova, Fèlix, Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, & IKERBASQUE, Basque Foundation for Science, 48011 Bilbao. Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions. United States. doi:10.1063/1.4960202.
Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, Ribeiro, Mário, Atxabal, Ainhoa, Llopis, Roger, Bedoya-Pinto, Amilcar, Max Planck Institute of Microstructure Physics, D-06120 Halle, Sun, Xiangnan, National Center for Nanoscience and Technology, 100190 Beijing, Casanova, Fèlix, Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu, and IKERBASQUE, Basque Foundation for Science, 48011 Bilbao. Mon . "Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions". United States. doi:10.1063/1.4960202.
@article{osti_22594395,
title = {Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions},
author = {Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu and Ribeiro, Mário and Atxabal, Ainhoa and Llopis, Roger and Bedoya-Pinto, Amilcar and Max Planck Institute of Microstructure Physics, D-06120 Halle and Sun, Xiangnan and National Center for Nanoscience and Technology, 100190 Beijing and Casanova, Fèlix and Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu and IKERBASQUE, Basque Foundation for Science, 48011 Bilbao},
abstractNote = {The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.},
doi = {10.1063/1.4960202},
journal = {Applied Physics Letters},
number = 5,
volume = 109,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 2016},
month = {Mon Aug 01 00:00:00 EDT 2016}
}