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Title: Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

Abstract

Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

Authors:
; ; ; ; ;  [1];  [2]
  1. Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)
  2. Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)
Publication Date:
OSTI Identifier:
22594381
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; BREAKDOWN; CAPACITORS; COBALT; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; FILMS; FOILS; GRAPHENE; GRAPHITE; LAYERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOELECTRONICS; PLASMA; SUBSTRATES; SYNTHESIS

Citation Formats

Xu, Zhongguang, Khanaki, Alireza, Tian, Hao, Zheng, Renjing, Suja, Mohammad, Liu, Jianlin, and Zheng, Jian-Guo. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4960165.
Xu, Zhongguang, Khanaki, Alireza, Tian, Hao, Zheng, Renjing, Suja, Mohammad, Liu, Jianlin, & Zheng, Jian-Guo. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy. United States. doi:10.1063/1.4960165.
Xu, Zhongguang, Khanaki, Alireza, Tian, Hao, Zheng, Renjing, Suja, Mohammad, Liu, Jianlin, and Zheng, Jian-Guo. Mon . "Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy". United States. doi:10.1063/1.4960165.
@article{osti_22594381,
title = {Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy},
author = {Xu, Zhongguang and Khanaki, Alireza and Tian, Hao and Zheng, Renjing and Suja, Mohammad and Liu, Jianlin and Zheng, Jian-Guo},
abstractNote = {Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.},
doi = {10.1063/1.4960165},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 109,
place = {United States},
year = {2016},
month = {7}
}