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Title: Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

Abstract

Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.

Authors:
;  [1];  [2];  [1]
  1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049 (China)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22594354
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABUNDANCE; CHARGE TRANSPORT; CONCENTRATION RATIO; LOADING; NANOSTRUCTURES; TRANSPORT THEORY; TRAPS; TUNNEL EFFECT

Citation Formats

Li, Guochang, Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn, School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ, and Li, Shengtao, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn. Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps. United States: N. p., 2016. Web. doi:10.1063/1.4960638.
Li, Guochang, Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn, School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ, & Li, Shengtao, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn. Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps. United States. doi:10.1063/1.4960638.
Li, Guochang, Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn, School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ, and Li, Shengtao, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn. Mon . "Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps". United States. doi:10.1063/1.4960638.
@article{osti_22594354,
title = {Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps},
author = {Li, Guochang and Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn and School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ and Li, Shengtao, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn},
abstractNote = {Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.},
doi = {10.1063/1.4960638},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}