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Title: Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

Abstract

We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

Authors:
 [1];  [1];  [2];  [3]
  1. Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. (United States)
  3. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)
Publication Date:
OSTI Identifier:
22594351
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; DEFECTS; ELECTRIC FIELDS; ELECTRON SPIN RESONANCE; ENERGY LEVELS; FILMS; HYDROGENATION; MAGNETORESISTANCE; PARAMAGNETISM; SILICON; SILICON NITRIDES; SPIN; TRANSPORT THEORY; VALENCE

Citation Formats

Mutch, Michael J., Lenahan, Patrick M., Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, and King, Sean W.. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride. United States: N. p., 2016. Web. doi:10.1063/1.4960810.
Mutch, Michael J., Lenahan, Patrick M., Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, & King, Sean W.. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride. United States. doi:10.1063/1.4960810.
Mutch, Michael J., Lenahan, Patrick M., Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, and King, Sean W.. Mon . "Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride". United States. doi:10.1063/1.4960810.
@article{osti_22594351,
title = {Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride},
author = {Mutch, Michael J. and Lenahan, Patrick M. and Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 and King, Sean W.},
abstractNote = {We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.},
doi = {10.1063/1.4960810},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}