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Title: Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

Abstract

We report a 23.4% improvement of conversion efficiency in solar cells based on InGaN/GaN multiple quantum wells by using a patterned sapphire substrate in the fabrication process. The efficiency enhancement is due to the improvement of the crystalline quality, as proven by the reduction of the threading dislocation density. More importantly, the better crystalline quality leads to a positive photovoltaic efficiency temperature coefficient up to 423 K, which shows the property and advantage of wide gap semiconductors like InGaN, signifying the potential of III-nitride based solar cells for high temperature and concentrating solar power applications.

Authors:
; ; ; ; ; ; ; ; ;  [1]; ;  [1];  [2]
  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22594348
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DISLOCATIONS; EFFICIENCY; GALLIUM NITRIDES; INDIUM NITRIDES; PHOTOVOLTAIC EFFECT; QUANTUM WELLS; SAPPHIRE; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SUBSTRATES; TEMPERATURE COEFFICIENT; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Chen, Zhaoying, Zheng, Xiantong, Li, Zhilong, Wang, Ping, Rong, Xin, Wang, Tao, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Ge, Weikun, Shen, Bo, Wang, Xinqiang, E-mail: wangshi@pku.edu.cn, and Collaborative Innovation Center of Quantum Matter, Beijing 100871. Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs. United States: N. p., 2016. Web. doi:10.1063/1.4960765.
Chen, Zhaoying, Zheng, Xiantong, Li, Zhilong, Wang, Ping, Rong, Xin, Wang, Tao, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Ge, Weikun, Shen, Bo, Wang, Xinqiang, E-mail: wangshi@pku.edu.cn, & Collaborative Innovation Center of Quantum Matter, Beijing 100871. Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs. United States. doi:10.1063/1.4960765.
Chen, Zhaoying, Zheng, Xiantong, Li, Zhilong, Wang, Ping, Rong, Xin, Wang, Tao, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Ge, Weikun, Shen, Bo, Wang, Xinqiang, E-mail: wangshi@pku.edu.cn, and Collaborative Innovation Center of Quantum Matter, Beijing 100871. Mon . "Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs". United States. doi:10.1063/1.4960765.
@article{osti_22594348,
title = {Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs},
author = {Chen, Zhaoying and Zheng, Xiantong and Li, Zhilong and Wang, Ping and Rong, Xin and Wang, Tao and Yang, Xuelin and Xu, Fujun and Qin, Zhixin and Ge, Weikun and Shen, Bo and Wang, Xinqiang, E-mail: wangshi@pku.edu.cn and Collaborative Innovation Center of Quantum Matter, Beijing 100871},
abstractNote = {We report a 23.4% improvement of conversion efficiency in solar cells based on InGaN/GaN multiple quantum wells by using a patterned sapphire substrate in the fabrication process. The efficiency enhancement is due to the improvement of the crystalline quality, as proven by the reduction of the threading dislocation density. More importantly, the better crystalline quality leads to a positive photovoltaic efficiency temperature coefficient up to 423 K, which shows the property and advantage of wide gap semiconductors like InGaN, signifying the potential of III-nitride based solar cells for high temperature and concentrating solar power applications.},
doi = {10.1063/1.4960765},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}