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Title: Characterization of encapsulated quantum dots via electron channeling contrast imaging

Abstract

A method for characterization of encapsulated epitaxial quantum dots (QD) in plan-view geometry using electron channeling contrast imaging (ECCI) is presented. The efficacy of the method, which requires minimal sample preparation, is demonstrated with proof-of-concept data from encapsulated (sub-surface) epitaxial InAs QDs within a GaAs matrix. Imaging of the QDs under multiple diffraction conditions is presented, establishing that ECCI can provide effectively identical visualization capabilities as conventional two-beam transmission electron microscopy. This method facilitates rapid, non-destructive characterization of sub-surface QDs giving immediate access to valuable nanostructural information.

Authors:
;  [1];  [2];  [3];  [1];  [4]
  1. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  3. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22594346
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BEAMS; DIFFRACTION; ELECTRON CHANNELING; ELECTRONS; EPITAXY; GALLIUM ARSENIDES; GEOMETRY; IMAGES; INDIUM ARSENIDES; MATRICES; QUANTUM DOTS; SAMPLE PREPARATION; SURFACES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Deitz, Julia I., McComb, David W., Carnevale, Santino D., De Graef, Marc, Grassman, Tyler J., E-mail: grassman.5@osu.edu, and Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210. Characterization of encapsulated quantum dots via electron channeling contrast imaging. United States: N. p., 2016. Web. doi:10.1063/1.4960643.
Deitz, Julia I., McComb, David W., Carnevale, Santino D., De Graef, Marc, Grassman, Tyler J., E-mail: grassman.5@osu.edu, & Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210. Characterization of encapsulated quantum dots via electron channeling contrast imaging. United States. doi:10.1063/1.4960643.
Deitz, Julia I., McComb, David W., Carnevale, Santino D., De Graef, Marc, Grassman, Tyler J., E-mail: grassman.5@osu.edu, and Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210. Mon . "Characterization of encapsulated quantum dots via electron channeling contrast imaging". United States. doi:10.1063/1.4960643.
@article{osti_22594346,
title = {Characterization of encapsulated quantum dots via electron channeling contrast imaging},
author = {Deitz, Julia I. and McComb, David W. and Carnevale, Santino D. and De Graef, Marc and Grassman, Tyler J., E-mail: grassman.5@osu.edu and Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210},
abstractNote = {A method for characterization of encapsulated epitaxial quantum dots (QD) in plan-view geometry using electron channeling contrast imaging (ECCI) is presented. The efficacy of the method, which requires minimal sample preparation, is demonstrated with proof-of-concept data from encapsulated (sub-surface) epitaxial InAs QDs within a GaAs matrix. Imaging of the QDs under multiple diffraction conditions is presented, establishing that ECCI can provide effectively identical visualization capabilities as conventional two-beam transmission electron microscopy. This method facilitates rapid, non-destructive characterization of sub-surface QDs giving immediate access to valuable nanostructural information.},
doi = {10.1063/1.4960643},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}