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Title: Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect

Abstract

The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.

Authors:
; ;  [1]
  1. Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22594341
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC FIELDS; ELECTRODES; METALS; NANOELECTRONICS; OPTOELECTRONIC DEVICES; PERFORMANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SENSORS; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn, Xiong, S. J., and Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn. Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect. United States: N. p., 2016. Web. doi:10.1063/1.4960768.
Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn, Xiong, S. J., & Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn. Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect. United States. doi:10.1063/1.4960768.
Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn, Xiong, S. J., and Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn. Mon . "Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect". United States. doi:10.1063/1.4960768.
@article{osti_22594341,
title = {Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect},
author = {Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn and Xiong, S. J. and Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn},
abstractNote = {The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.},
doi = {10.1063/1.4960768},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}