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Title: Size-effects in indium gallium arsenide nanowire field-effect transistors

Abstract

We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V{sub T} variability, and on-current, through the mean free path, in the choice of the channel material.

Authors:
;  [1]
  1. Department of Electrical and Information Technology, Lund University, Lund 22101 (Sweden)
Publication Date:
OSTI Identifier:
22594316
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EFFECTIVE MASS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM ARSENIDES; MEAN FREE PATH; MOSFET; NANOWIRES; ONE-DIMENSIONAL CALCULATIONS; QUANTIZATION; QUANTUM WELLS; RELIABILITY; TEMPERATURE MEASUREMENT; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; WIDTH

Citation Formats

Zota, Cezar B., E-mail: cezar.zota@eit.lth.se, and Lind, E. Size-effects in indium gallium arsenide nanowire field-effect transistors. United States: N. p., 2016. Web. doi:10.1063/1.4961109.
Zota, Cezar B., E-mail: cezar.zota@eit.lth.se, & Lind, E. Size-effects in indium gallium arsenide nanowire field-effect transistors. United States. doi:10.1063/1.4961109.
Zota, Cezar B., E-mail: cezar.zota@eit.lth.se, and Lind, E. 2016. "Size-effects in indium gallium arsenide nanowire field-effect transistors". United States. doi:10.1063/1.4961109.
@article{osti_22594316,
title = {Size-effects in indium gallium arsenide nanowire field-effect transistors},
author = {Zota, Cezar B., E-mail: cezar.zota@eit.lth.se and Lind, E.},
abstractNote = {We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V{sub T} variability, and on-current, through the mean free path, in the choice of the channel material.},
doi = {10.1063/1.4961109},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
  • Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H{sup +} ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach amore » detection limit of 10 pM for Avidin.« less
  • To suppress short channel effects, lower off-state leakage current and enhance gate coupling efficiency, InAs nanowires (NWs) with diameter smaller than 10 nm could be needed in field-effect transistors (FETs) as the channel length scales down to tens of nanometers to improve the performance and increase the integration. Here, we fabricate and study FETs based on ultrathin wurtzite-structured InAs NWs, with the smallest NW diameter being 7.2 nm. The FETs based on ultrathin NWs exhibit high I{sub on}/I{sub off} ratios of up to 2 × 10{sup 8}, small subthreshold swings of down to 120 mV/decade, and operate in enhancement-mode. The performance of the devices changesmore » as a function of the diameter of the InAs NWs. The advantages and challenges of the FETs based on ultrathin NWs are discussed.« less
  • The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% ofmore » efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.« less
  • Investigations have shown that in the local approximation (for sizes L < 100 μm), AlGaN/GaN high electron mobility transistor (HEMT) structures satisfy to all properties of chaotic systems and can be described in the language of fractal geometry of fractional dimensions. For such objects, values of their electrophysical characteristics depend on the linear sizes of the examined regions, which explain the presence of the so-called size effects—dependences of the electrophysical and instrumental characteristics on the linear sizes of the active elements of semiconductor devices. In the present work, a relationship has been established for the linear model parameters of themore » equivalent circuit elements of internal transistors with fractal geometry of the heteroepitaxial structure manifested through a dependence of its relative electrophysical characteristics on the linear sizes of the examined surface areas. For the HEMTs, this implies dependences of their relative static (A/mm, mA/V/mm, Ω/mm, etc.) and microwave characteristics (W/mm) on the width d of the sink-source channel and on the number of sections n that leads to a nonlinear dependence of the retrieved parameter values of equivalent circuit elements of linear internal transistor models on n and d. Thus, it has been demonstrated that the size effects in semiconductors determined by the fractal geometry must be taken into account when investigating the properties of semiconductor objects on the levels less than the local approximation limit and designing and manufacturing field effect transistors. In general, the suggested approach allows a complex of problems to be solved on designing, optimizing, and retrieving the parameters of equivalent circuits of linear and nonlinear models of not only field effect transistors but also any arbitrary semiconductor devices with nonlinear instrumental characteristics.« less