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Title: Size-effects in indium gallium arsenide nanowire field-effect transistors

Abstract

We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V{sub T} variability, and on-current, through the mean free path, in the choice of the channel material.

Authors:
;  [1]
  1. Department of Electrical and Information Technology, Lund University, Lund 22101 (Sweden)
Publication Date:
OSTI Identifier:
22594316
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EFFECTIVE MASS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM ARSENIDES; MEAN FREE PATH; MOSFET; NANOWIRES; ONE-DIMENSIONAL CALCULATIONS; QUANTIZATION; QUANTUM WELLS; RELIABILITY; TEMPERATURE MEASUREMENT; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; WIDTH

Citation Formats

Zota, Cezar B., E-mail: cezar.zota@eit.lth.se, and Lind, E.. Size-effects in indium gallium arsenide nanowire field-effect transistors. United States: N. p., 2016. Web. doi:10.1063/1.4961109.
Zota, Cezar B., E-mail: cezar.zota@eit.lth.se, & Lind, E.. Size-effects in indium gallium arsenide nanowire field-effect transistors. United States. doi:10.1063/1.4961109.
Zota, Cezar B., E-mail: cezar.zota@eit.lth.se, and Lind, E.. Mon . "Size-effects in indium gallium arsenide nanowire field-effect transistors". United States. doi:10.1063/1.4961109.
@article{osti_22594316,
title = {Size-effects in indium gallium arsenide nanowire field-effect transistors},
author = {Zota, Cezar B., E-mail: cezar.zota@eit.lth.se and Lind, E.},
abstractNote = {We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V{sub T} variability, and on-current, through the mean free path, in the choice of the channel material.},
doi = {10.1063/1.4961109},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}