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Title: Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Abstract

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.

Authors:
; ; ; ;  [1]
  1. Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375 (United States)
Publication Date:
OSTI Identifier:
22594315
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 U.S. Government; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; HYDRIDES; INTERFACES; LAYERS; METRICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SIGNALS; STRESSES; SUBSTRATES; SURFACES; TRANSISTORS; TWO-DIMENSIONAL CALCULATIONS; VAPOR PHASE EPITAXY; VAPORS

Citation Formats

Deen, David A., E-mail: david.deen@alumni.nd.edu, Storm, David F., Scott Katzer, D., Bass, R., and Meyer, David J. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture. United States: N. p., 2016. Web. doi:10.1063/1.4961009.
Deen, David A., E-mail: david.deen@alumni.nd.edu, Storm, David F., Scott Katzer, D., Bass, R., & Meyer, David J. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture. United States. doi:10.1063/1.4961009.
Deen, David A., E-mail: david.deen@alumni.nd.edu, Storm, David F., Scott Katzer, D., Bass, R., and Meyer, David J. Mon . "Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture". United States. doi:10.1063/1.4961009.
@article{osti_22594315,
title = {Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture},
author = {Deen, David A., E-mail: david.deen@alumni.nd.edu and Storm, David F. and Scott Katzer, D. and Bass, R. and Meyer, David J.},
abstractNote = {A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.},
doi = {10.1063/1.4961009},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}