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Title: Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes

Abstract

A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb{sub 2}O{sub 3}/Ag/Sb{sub 2}O{sub 3} (SAS) source and drain electrodes has been developed. A pentacene/N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm{sup 2}/V s and 0.027 cm{sup 2}/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logic integrated circuit applications.

Authors:
; ; ; ;  [1]
  1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
Publication Date:
OSTI Identifier:
22594314
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY OXIDES; ELECTRODES; ELECTRON BEAMS; ELECTRON MOBILITY; ELECTRON TEMPERATURE; ELECTRONS; FABRICATION; HETEROJUNCTIONS; HOLES; IMIDES; INTEGRATED CIRCUITS; LAYERS; PENTACENE; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSISTORS

Citation Formats

Zhang, Nan, Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn, Lin, Jie, Li, Yantao, and Liu, Xingyuan, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn. Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes. United States: N. p., 2016. Web. doi:10.1063/1.4960974.
Zhang, Nan, Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn, Lin, Jie, Li, Yantao, & Liu, Xingyuan, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn. Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes. United States. doi:10.1063/1.4960974.
Zhang, Nan, Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn, Lin, Jie, Li, Yantao, and Liu, Xingyuan, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn. Mon . "Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes". United States. doi:10.1063/1.4960974.
@article{osti_22594314,
title = {Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes},
author = {Zhang, Nan and Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn and Lin, Jie and Li, Yantao and Liu, Xingyuan, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn},
abstractNote = {A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb{sub 2}O{sub 3}/Ag/Sb{sub 2}O{sub 3} (SAS) source and drain electrodes has been developed. A pentacene/N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm{sup 2}/V s and 0.027 cm{sup 2}/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logic integrated circuit applications.},
doi = {10.1063/1.4960974},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}