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Title: Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

Abstract

The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm h{sup −1}. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10{sup 16} cm{sup −3} phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications.

Authors:
; ; ; ;  [1];  [2]; ; ;  [3]; ; ;  [4];  [1];  [5]
  1. Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)
  2. (Belgium)
  3. Groupe d'Etude de la Matière Condensée (GEMaC), Université de Versailles St. Quentin en Yvelines, CNRS, Université Paris Saclay, 45 ave. des Etats-Unis, F-78035 Versailles (France)
  4. EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium)
  5. Institut d'Electronique, Microélectronique et Nanotechnologie (IEMN/CNRS 8520), Université Lille, Ave. Poincaré-BP 60069, F-59652 Villeneuve d'Ascq (France)
Publication Date:
OSTI Identifier:
22594310
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; DEPOSITION; DEPOSITS; DIAMONDS; DOPED MATERIALS; FABRICATION; FCC LATTICES; FILMS; N-TYPE CONDUCTORS; PHOSPHORUS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Balasubramaniam, Y., Pobedinskas, P., E-mail: paulius.pobedinskas@uhasselt.be, Janssens, S. D., Nesládek, M., Haenen, K., E-mail: ken.haenen@uhasselt.be, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Sakr, G., Jomard, F., Barjon, J., Turner, S., Lu, Y.-G., Verbeeck, J., Dexters, W., and Soltani, A. Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond. United States: N. p., 2016. Web. doi:10.1063/1.4960970.
Balasubramaniam, Y., Pobedinskas, P., E-mail: paulius.pobedinskas@uhasselt.be, Janssens, S. D., Nesládek, M., Haenen, K., E-mail: ken.haenen@uhasselt.be, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Sakr, G., Jomard, F., Barjon, J., Turner, S., Lu, Y.-G., Verbeeck, J., Dexters, W., & Soltani, A. Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond. United States. doi:10.1063/1.4960970.
Balasubramaniam, Y., Pobedinskas, P., E-mail: paulius.pobedinskas@uhasselt.be, Janssens, S. D., Nesládek, M., Haenen, K., E-mail: ken.haenen@uhasselt.be, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Sakr, G., Jomard, F., Barjon, J., Turner, S., Lu, Y.-G., Verbeeck, J., Dexters, W., and Soltani, A. Mon . "Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond". United States. doi:10.1063/1.4960970.
@article{osti_22594310,
title = {Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond},
author = {Balasubramaniam, Y. and Pobedinskas, P., E-mail: paulius.pobedinskas@uhasselt.be and Janssens, S. D. and Nesládek, M. and Haenen, K., E-mail: ken.haenen@uhasselt.be and IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek and Sakr, G. and Jomard, F. and Barjon, J. and Turner, S. and Lu, Y.-G. and Verbeeck, J. and Dexters, W. and Soltani, A.},
abstractNote = {The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm h{sup −1}. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10{sup 16} cm{sup −3} phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications.},
doi = {10.1063/1.4960970},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}