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Title: Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Abstract

We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.

Authors:
; ; ; ; ;  [1];  [2]; ;  [3];  [4];  [1];  [2]; ;  [5]; ; ; ;  [1]
  1. Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)
  2. (Russian Federation)
  3. Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)
  4. FGUE “Salut,” 603950 Nizhny Novgorod (Russian Federation)
  5. Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22594308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; BUFFERS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRICAL PUMPING; GALLIUM ARSENIDES; GERMANIUM; INDIUM ARSENIDES; LASERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; QUANTUM WELLS; SILICON; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT; VAPORS; WAVELENGTHS

Citation Formats

Aleshkin, V. Ya., Dubinov, A. A., Krasilnik, Z. F., Kudryavtsev, K. E., Novikov, A. V., Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Baidus, N. V., Samartsev, I. V., Fefelov, A. G., Nekorkin, S. M., Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Pavlov, D. A., Sushkov, A. A., Skorokhodov, E. V., Shaleev, M. V., Yablonskiy, A. N., and Yunin, P. A. Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate. United States: N. p., 2016. Web. doi:10.1063/1.4961059.
Aleshkin, V. Ya., Dubinov, A. A., Krasilnik, Z. F., Kudryavtsev, K. E., Novikov, A. V., Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Baidus, N. V., Samartsev, I. V., Fefelov, A. G., Nekorkin, S. M., Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Pavlov, D. A., Sushkov, A. A., Skorokhodov, E. V., Shaleev, M. V., Yablonskiy, A. N., & Yunin, P. A. Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate. United States. doi:10.1063/1.4961059.
Aleshkin, V. Ya., Dubinov, A. A., Krasilnik, Z. F., Kudryavtsev, K. E., Novikov, A. V., Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Baidus, N. V., Samartsev, I. V., Fefelov, A. G., Nekorkin, S. M., Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Pavlov, D. A., Sushkov, A. A., Skorokhodov, E. V., Shaleev, M. V., Yablonskiy, A. N., and Yunin, P. A. 2016. "Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate". United States. doi:10.1063/1.4961059.
@article{osti_22594308,
title = {Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate},
author = {Aleshkin, V. Ya. and Dubinov, A. A. and Krasilnik, Z. F. and Kudryavtsev, K. E. and Novikov, A. V. and Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru and Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod and Baidus, N. V. and Samartsev, I. V. and Fefelov, A. G. and Nekorkin, S. M. and Physical-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod and Pavlov, D. A. and Sushkov, A. A. and Skorokhodov, E. V. and Shaleev, M. V. and Yablonskiy, A. N. and Yunin, P. A.},
abstractNote = {We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.},
doi = {10.1063/1.4961059},
journal = {Applied Physics Letters},
number = 6,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
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