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Title: Evidence for room-temperature in-diffusion of nickel into silicon

Abstract

Interstitial nickel in crystalline Si is shown to be a fast diffuser at room temperature. In this study, Ni is incorporated in Si by wet chemical etching in nickel-contaminated alkaline solutions. Nickel in-diffusion is observed by means of detecting the electrically active NiVO defect, which is formed due to Ni capture to the vacancy–oxygen complex in electron-irradiated Si. The depth profiles of the NiVO concentration measured by the deep-level transient spectroscopy technique extend to ∼15 μm in the samples doped with Ni at 35 °C for 30 min. This allows us to get a lower estimate for the nickel diffusivity at this temperature as 10{sup −9} cm{sup 2}/s. The activation energy for electron emission from the NiVO level and the apparent capture cross section are equal to 371 meV and 3 × 10{sup −15} cm{sup 2}, respectively. The NiVO complex dissociates at 300 °C reestablishing the initial concentration of the VO centers.

Authors:
 [1];  [2]
  1. Institute of Microelectronics Technology RAS, 142432 Chernogolovka (Russian Federation)
  2. Technische Universität Dresden, 01062 Dresden (Germany)
Publication Date:
OSTI Identifier:
22594291
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 10; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CONCENTRATION RATIO; CROSS SECTIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; DOPED MATERIALS; ELECTRONS; ETCHING; IRRADIATION; NICKEL; OXYGEN; OXYGEN COMPLEXES; SILICON; TEMPERATURE RANGE 0273-0400 K; VACANCIES

Citation Formats

Yarykin, Nikolai, E-mail: nay@iptm.ru, and Weber, Jörg. Evidence for room-temperature in-diffusion of nickel into silicon. United States: N. p., 2016. Web. doi:10.1063/1.4962394.
Yarykin, Nikolai, E-mail: nay@iptm.ru, & Weber, Jörg. Evidence for room-temperature in-diffusion of nickel into silicon. United States. doi:10.1063/1.4962394.
Yarykin, Nikolai, E-mail: nay@iptm.ru, and Weber, Jörg. 2016. "Evidence for room-temperature in-diffusion of nickel into silicon". United States. doi:10.1063/1.4962394.
@article{osti_22594291,
title = {Evidence for room-temperature in-diffusion of nickel into silicon},
author = {Yarykin, Nikolai, E-mail: nay@iptm.ru and Weber, Jörg},
abstractNote = {Interstitial nickel in crystalline Si is shown to be a fast diffuser at room temperature. In this study, Ni is incorporated in Si by wet chemical etching in nickel-contaminated alkaline solutions. Nickel in-diffusion is observed by means of detecting the electrically active NiVO defect, which is formed due to Ni capture to the vacancy–oxygen complex in electron-irradiated Si. The depth profiles of the NiVO concentration measured by the deep-level transient spectroscopy technique extend to ∼15 μm in the samples doped with Ni at 35 °C for 30 min. This allows us to get a lower estimate for the nickel diffusivity at this temperature as 10{sup −9} cm{sup 2}/s. The activation energy for electron emission from the NiVO level and the apparent capture cross section are equal to 371 meV and 3 × 10{sup −15} cm{sup 2}, respectively. The NiVO complex dissociates at 300 °C reestablishing the initial concentration of the VO centers.},
doi = {10.1063/1.4962394},
journal = {Applied Physics Letters},
number = 10,
volume = 109,
place = {United States},
year = 2016,
month = 9
}