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Title: Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

Abstract

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p–n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

Authors:
; ;  [1];  [2]; ;  [3];  [4];  [5]
  1. Faculty of Nanoscience and Advanced Materials Engineering, Graphene Research Institute, and Hybrid Materials Research Center, Sejong University, Seoul 05006 (Korea, Republic of)
  2. School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom)
  3. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
  4. Department of Materials Science and Engineering, KAIST, Daejeon 34141 (Korea, Republic of)
  5. UNIST Central Research Facilities (UCRF), UNIST, Ulsan 44919 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22594286
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 10; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTROLUMINESCENCE; FILMS; GALLIUM NITRIDES; GEOMETRY; HETEROJUNCTIONS; LIGHT EMITTING DIODES; NANOWIRES; PHOTOLUMINESCENCE; P-N JUNCTIONS; THICKNESS; TUNNEL EFFECT; WAVELENGTHS; WIRES; ZINC OXIDES

Citation Formats

Jeong, Junseok, Choi, Ji Eun, Hong, Young Joon, E-mail: yjhong@sejong.ac.kr, Kim, Yong-Jin, Hwang, Sunyong, Kim, Jong Kyu, Kim, Sung Kyu, and Jeong, Hu Young. Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes. United States: N. p., 2016. Web. doi:10.1063/1.4960586.
Jeong, Junseok, Choi, Ji Eun, Hong, Young Joon, E-mail: yjhong@sejong.ac.kr, Kim, Yong-Jin, Hwang, Sunyong, Kim, Jong Kyu, Kim, Sung Kyu, & Jeong, Hu Young. Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes. United States. doi:10.1063/1.4960586.
Jeong, Junseok, Choi, Ji Eun, Hong, Young Joon, E-mail: yjhong@sejong.ac.kr, Kim, Yong-Jin, Hwang, Sunyong, Kim, Jong Kyu, Kim, Sung Kyu, and Jeong, Hu Young. Mon . "Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes". United States. doi:10.1063/1.4960586.
@article{osti_22594286,
title = {Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes},
author = {Jeong, Junseok and Choi, Ji Eun and Hong, Young Joon, E-mail: yjhong@sejong.ac.kr and Kim, Yong-Jin and Hwang, Sunyong and Kim, Jong Kyu and Kim, Sung Kyu and Jeong, Hu Young},
abstractNote = {Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p–n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.},
doi = {10.1063/1.4960586},
journal = {Applied Physics Letters},
number = 10,
volume = 109,
place = {United States},
year = {Mon Sep 05 00:00:00 EDT 2016},
month = {Mon Sep 05 00:00:00 EDT 2016}
}