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Title: Formation of homologous In{sub 2}O{sub 3}(ZnO){sub m} thin films and its thermoelectric properties

Abstract

Homologous In{sub 2}O{sub 3}(ZnO){sub 5} thin films were produced on a synthetic quartz glass substrate by thermal annealing of magnetron sputtered In{sub 2}O{sub 3}-ZnO compound films. When the annealing temperature was increased to 700 °C, the sputtered In{sub 2}O{sub 3}-ZnO film with In{sub 2}O{sub 3} microcrystalline changed to a c-oriented homologous In{sub 2}O{sub 3}(ZnO){sub 5} structure, for which the crystallization is suggested to begin from the surface and proceed along with the film thickness. The annealing temperature of 700 °C to form the In{sub 2}O{sub 3}(ZnO){sub 5} structure was substantially lower than temperatures of conventional solid state synthesis from In{sub 2}O{sub 3} and ZnO powders, which is attributed to the rapid diffusional transport of In and Zn due to the mixing of In{sub 2}O{sub 3} and ZnO in the atomic level for sputtered In{sub 2}O{sub 3}-ZnO compound films. The homologous structure collapsed at temperatures above 900 °C, which is attributed to (1) zinc vaporization from the surface and (2) a gradual increase of zinc silicate phase at the interface. This c-oriented layer structure of homologous In{sub 2}O{sub 3}(ZnO){sub 5} thin films along the film thickness allowed the thin film to reach a power factor of 1.3 × 10{sup −4} W/m K{sup 2} at 670 °C, which ismore » comparable with the reported maximum value for the textured In{sub 2}O{sub 3}(ZnO){sub 5} powder (about 1.6 × 10{sup −4} W/m K{sup 2} at 650 °C).« less

Authors:
; ;  [1]; ;  [2];  [3]
  1. Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)
  2. Materials Science and Engineering Program and Nanotechnology Research and Application Center, Sabanci University, Orhanli, Tuzla-Istanbul 34956 (Turkey)
  3. Research Center, Lintec Corporation, 5-14-42 Nishiki-cho, Warabi-shi, Saitama 335-0005 (Japan)
Publication Date:
OSTI Identifier:
22592874
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 4; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ANNEALING; COMPARATIVE EVALUATIONS; CRYSTALLIZATION; INDIUM OXIDES; LAYERS; MAGNETRONS; POWDERS; POWER FACTOR; QUARTZ; SPUTTERING; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0400-1000 K; THERMOELECTRIC PROPERTIES; THICKNESS; THIN FILMS; ZINC; ZINC OXIDES; ZINC SILICATES

Citation Formats

Jia, Junjun, Nakamura, Shin-ichi, Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp, Ow-Yang, Cleva, Inan Akmehmet, Güliz, and Kato, Kunihisa. Formation of homologous In{sub 2}O{sub 3}(ZnO){sub m} thin films and its thermoelectric properties. United States: N. p., 2016. Web. doi:10.1116/1.4953032.
Jia, Junjun, Nakamura, Shin-ichi, Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp, Ow-Yang, Cleva, Inan Akmehmet, Güliz, & Kato, Kunihisa. Formation of homologous In{sub 2}O{sub 3}(ZnO){sub m} thin films and its thermoelectric properties. United States. doi:10.1116/1.4953032.
Jia, Junjun, Nakamura, Shin-ichi, Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp, Ow-Yang, Cleva, Inan Akmehmet, Güliz, and Kato, Kunihisa. 2016. "Formation of homologous In{sub 2}O{sub 3}(ZnO){sub m} thin films and its thermoelectric properties". United States. doi:10.1116/1.4953032.
@article{osti_22592874,
title = {Formation of homologous In{sub 2}O{sub 3}(ZnO){sub m} thin films and its thermoelectric properties},
author = {Jia, Junjun and Nakamura, Shin-ichi and Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp and Ow-Yang, Cleva and Inan Akmehmet, Güliz and Kato, Kunihisa},
abstractNote = {Homologous In{sub 2}O{sub 3}(ZnO){sub 5} thin films were produced on a synthetic quartz glass substrate by thermal annealing of magnetron sputtered In{sub 2}O{sub 3}-ZnO compound films. When the annealing temperature was increased to 700 °C, the sputtered In{sub 2}O{sub 3}-ZnO film with In{sub 2}O{sub 3} microcrystalline changed to a c-oriented homologous In{sub 2}O{sub 3}(ZnO){sub 5} structure, for which the crystallization is suggested to begin from the surface and proceed along with the film thickness. The annealing temperature of 700 °C to form the In{sub 2}O{sub 3}(ZnO){sub 5} structure was substantially lower than temperatures of conventional solid state synthesis from In{sub 2}O{sub 3} and ZnO powders, which is attributed to the rapid diffusional transport of In and Zn due to the mixing of In{sub 2}O{sub 3} and ZnO in the atomic level for sputtered In{sub 2}O{sub 3}-ZnO compound films. The homologous structure collapsed at temperatures above 900 °C, which is attributed to (1) zinc vaporization from the surface and (2) a gradual increase of zinc silicate phase at the interface. This c-oriented layer structure of homologous In{sub 2}O{sub 3}(ZnO){sub 5} thin films along the film thickness allowed the thin film to reach a power factor of 1.3 × 10{sup −4} W/m K{sup 2} at 670 °C, which is comparable with the reported maximum value for the textured In{sub 2}O{sub 3}(ZnO){sub 5} powder (about 1.6 × 10{sup −4} W/m K{sup 2} at 650 °C).},
doi = {10.1116/1.4953032},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 4,
volume = 34,
place = {United States},
year = 2016,
month = 7
}
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