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Title: Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

Abstract

Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterizedmore » by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.« less

Authors:
; ; ; ;  [1];  [2]
  1. The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland)
  2. The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa (Poland)
Publication Date:
OSTI Identifier:
22592857
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 5; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ATOMIC FORCE MICROSCOPY; BOSE-EINSTEIN STATISTICS; COALESCENCE; COMPARATIVE EVALUATIONS; CONTROL; DEPOSITS; GALLIUM NITRIDES; IMAGE PROCESSING; IMAGES; LAYERS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; VAPOR PHASE EPITAXY; VAPORS; X-RAY DIFFRACTION

Citation Formats

Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl, Wośko, Mateusz, Paszkiewicz, Bartłomiej, Paszkiewicz, Bogdan, Paszkiewicz, Regina, and Sankowska, Iwona. Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy. United States: N. p., 2016. Web. doi:10.1116/1.4958805.
Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl, Wośko, Mateusz, Paszkiewicz, Bartłomiej, Paszkiewicz, Bogdan, Paszkiewicz, Regina, & Sankowska, Iwona. Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy. United States. doi:10.1116/1.4958805.
Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl, Wośko, Mateusz, Paszkiewicz, Bartłomiej, Paszkiewicz, Bogdan, Paszkiewicz, Regina, and Sankowska, Iwona. Thu . "Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy". United States. doi:10.1116/1.4958805.
@article{osti_22592857,
title = {Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy},
author = {Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl and Wośko, Mateusz and Paszkiewicz, Bartłomiej and Paszkiewicz, Bogdan and Paszkiewicz, Regina and Sankowska, Iwona},
abstractNote = {Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterized by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.},
doi = {10.1116/1.4958805},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 5,
volume = 34,
place = {United States},
year = {Thu Sep 15 00:00:00 EDT 2016},
month = {Thu Sep 15 00:00:00 EDT 2016}
}