Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Journal Article · Mon May 16 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4950976· OSTI ID:22591747

Broström, M.; Gonzalez-Zalba, M. F. ^[1]; Tagliaferri, M. L. V. ^[2]; Vinet, M. ^[3]; Sanquer, M. ^[4]; Ferguson, A. J. ^[5]

---

1. Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
2. Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy)
3. CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France)
4. SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France)
5. Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)

We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

• OSTI ID: 22591747
• Journal Information: Applied Physics Letters, Vol. 108, Issue 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPACITANCE
EQUIPMENT
FABRICATION
FIELD EFFECT TRANSISTORS
NANOWIRES
QUANTUM DOTS
QUANTUM INFORMATION
SEMICONDUCTOR MATERIALS