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Title: Enhancement of carrier mobility in MoS{sub 2} field effect transistors by a SiO{sub 2} protective layer

Abstract

Molybdenum disulfide is a promising channel material for field effect transistors (FETs). In this paper, monolayer MoS{sub 2} grown by chemical vapor deposition (CVD) was used to fabricate top-gate FETs through standard optical lithography. During the fabrication process, charged impurities and interface states are introduced, and the photoresist is not removed cleanly, which both limit the carrier mobility and the source-drain current. We apply a SiO{sub 2} protective layer, which is deposited on the surface of MoS{sub 2}, in order to avoid the MoS{sub 2} directly contacting with the photoresist and the ambient environment. Therefore, the contact property between the MoS{sub 2} and the electrodes is improved, and the Coulomb scattering caused by the charged impurities and the interface states is reduced. Comparing MoS{sub 2} FETs with and without a SiO{sub 2} protective layer, the SiO{sub 2} protective layer is found to enhance the characteristics of the MoS{sub 2} FETs, including transfer and output characteristics. A high mobility of ∼42.3 cm{sup 2}/V s is achieved, which is very large among the top-gate CVD-grown monolayer MoS{sub 2} FETs.

Authors:
; ; ; ; ; ; ; ;  [1];  [2];  [2];  [1]
  1. Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 (China)
  2. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22591744
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; COULOMB SCATTERING; DEPOSITS; ELECTRODES; FABRICATION; FIELD EFFECT TRANSISTORS; IMPURITIES; INTERFACES; LAYERS; MOLYBDENUM; MOLYBDENUM SULFIDES; SILICON OXIDES; SURFACES

Citation Formats

Shao, Peng-Zhi, Zhao, Hai-Ming, Cao, Hui-Wen, Wang, Xue-Feng, Pang, Yu, Li, Yu-Xing, Deng, Ning-Qin, Yang, Yi, Ren, Tian-Ling, Zhang, Jing, Zhang, Guang-Yu, CollaborativeInnovation Center of Quantum Matter, Beijing 100190, Zhang, Sheng, The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, and Advanced Sensor and Integrated System Lab, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055. Enhancement of carrier mobility in MoS{sub 2} field effect transistors by a SiO{sub 2} protective layer. United States: N. p., 2016. Web. doi:10.1063/1.4950850.
Shao, Peng-Zhi, Zhao, Hai-Ming, Cao, Hui-Wen, Wang, Xue-Feng, Pang, Yu, Li, Yu-Xing, Deng, Ning-Qin, Yang, Yi, Ren, Tian-Ling, Zhang, Jing, Zhang, Guang-Yu, CollaborativeInnovation Center of Quantum Matter, Beijing 100190, Zhang, Sheng, The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, & Advanced Sensor and Integrated System Lab, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055. Enhancement of carrier mobility in MoS{sub 2} field effect transistors by a SiO{sub 2} protective layer. United States. doi:10.1063/1.4950850.
Shao, Peng-Zhi, Zhao, Hai-Ming, Cao, Hui-Wen, Wang, Xue-Feng, Pang, Yu, Li, Yu-Xing, Deng, Ning-Qin, Yang, Yi, Ren, Tian-Ling, Zhang, Jing, Zhang, Guang-Yu, CollaborativeInnovation Center of Quantum Matter, Beijing 100190, Zhang, Sheng, The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, and Advanced Sensor and Integrated System Lab, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055. Mon . "Enhancement of carrier mobility in MoS{sub 2} field effect transistors by a SiO{sub 2} protective layer". United States. doi:10.1063/1.4950850.
@article{osti_22591744,
title = {Enhancement of carrier mobility in MoS{sub 2} field effect transistors by a SiO{sub 2} protective layer},
author = {Shao, Peng-Zhi and Zhao, Hai-Ming and Cao, Hui-Wen and Wang, Xue-Feng and Pang, Yu and Li, Yu-Xing and Deng, Ning-Qin and Yang, Yi and Ren, Tian-Ling and Zhang, Jing and Zhang, Guang-Yu and CollaborativeInnovation Center of Quantum Matter, Beijing 100190 and Zhang, Sheng and The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050 and Advanced Sensor and Integrated System Lab, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055},
abstractNote = {Molybdenum disulfide is a promising channel material for field effect transistors (FETs). In this paper, monolayer MoS{sub 2} grown by chemical vapor deposition (CVD) was used to fabricate top-gate FETs through standard optical lithography. During the fabrication process, charged impurities and interface states are introduced, and the photoresist is not removed cleanly, which both limit the carrier mobility and the source-drain current. We apply a SiO{sub 2} protective layer, which is deposited on the surface of MoS{sub 2}, in order to avoid the MoS{sub 2} directly contacting with the photoresist and the ambient environment. Therefore, the contact property between the MoS{sub 2} and the electrodes is improved, and the Coulomb scattering caused by the charged impurities and the interface states is reduced. Comparing MoS{sub 2} FETs with and without a SiO{sub 2} protective layer, the SiO{sub 2} protective layer is found to enhance the characteristics of the MoS{sub 2} FETs, including transfer and output characteristics. A high mobility of ∼42.3 cm{sup 2}/V s is achieved, which is very large among the top-gate CVD-grown monolayer MoS{sub 2} FETs.},
doi = {10.1063/1.4950850},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 108,
place = {United States},
year = {2016},
month = {5}
}