Electrostatic and electrochemical tuning of superconductivity in two-dimensional NbSe{sub 2} crystals

Journal Article · Mon May 16 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4950804· OSTI ID:22591738

Yoshida, Masaro ^[1]; Ye, Jianting ^[2]; Nishizaki, Terukazu ^[3]; Kobayashi, Norio ^[4]; Iwasa, Yoshihiro ^[1]

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1. Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656 (Japan)
2. Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen (Netherlands)
3. Department of Electrical Engineering and Information Technology, Kyushu Sangyo University, Fukuoka 813-8503 (Japan)
4. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

We report modulation of the superconducting critical temperature (T{sub c}) of ultrathin niobium diselenide (NbSe{sub 2}) single crystals by gating an electric double-layer transistor. We realized reversible and irreversible changes of the T{sub c} by adjusting the operating range of the voltage. The reversible and irreversible responses correspond to the electrostatic carrier doping and the electrochemical etching of the crystal, respectively. The results suggest that electric double-layer gating provides opportunities to control and functionalize collective electronic phenomena in two-dimensional crystals.

• OSTI ID: 22591738
• Journal Information: Applied Physics Letters, Vol. 108, Issue 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONTROL
CRITICAL TEMPERATURE
ELECTRIC POTENTIAL
ELECTROCHEMISTRY
ETCHING
LAYERS
MODULATION
MONOCRYSTALS
NIOBIUM
NIOBIUM SELENIDES
SUPERCONDUCTIVITY
TRANSISTORS
TUNING
TWO-DIMENSIONAL SYSTEMS