Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure
Abstract
Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186 ± 46) W m{sup −1 }K{sup −1} is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsicmore »
- Authors:
-
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)
- Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712 (United States)
- Publication Date:
- OSTI Identifier:
- 22591731
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH; BORON; MICROSTRUCTURE; PHONONS; POWER FACTOR; PROBES; SCATTERING; TEMPERATURE RANGE 0273-0400 K; THERMAL CONDUCTIVITY; THERMOELECTRIC MATERIALS
Citation Formats
Kim, Jaehyun, Sellan, Daniel P., Ou, Eric, Shi, Li, Evans, Daniel A., Williams, Owen M., and Cowley, Alan H. Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure. United States: N. p., 2016.
Web. doi:10.1063/1.4950970.
Kim, Jaehyun, Sellan, Daniel P., Ou, Eric, Shi, Li, Evans, Daniel A., Williams, Owen M., & Cowley, Alan H. Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure. United States. https://doi.org/10.1063/1.4950970
Kim, Jaehyun, Sellan, Daniel P., Ou, Eric, Shi, Li, Evans, Daniel A., Williams, Owen M., and Cowley, Alan H. Mon .
"Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure". United States. https://doi.org/10.1063/1.4950970.
@article{osti_22591731,
title = {Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure},
author = {Kim, Jaehyun and Sellan, Daniel P. and Ou, Eric and Shi, Li and Evans, Daniel A. and Williams, Owen M. and Cowley, Alan H.},
abstractNote = {Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186 ± 46) W m{sup −1 }K{sup −1} is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.},
doi = {10.1063/1.4950970},
url = {https://www.osti.gov/biblio/22591731},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 108,
place = {United States},
year = {2016},
month = {5}
}
Other availability
Find in Google Scholar
Search WorldCat to find libraries that may hold this journal
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referencing / citing this record:
Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb
journal, August 2018
- Liu, Te-Huan; Song, Bai; Meroueh, Laureen
- Physical Review B, Vol. 98, Issue 8
Electronic band structure and optical properties of boron arsenide
journal, May 2019
- Buckeridge, J.; Scanlon, D. O.
- Physical Review Materials, Vol. 3, Issue 5
High Thermal Conductivity in Isotopically Enriched Cubic Boron Phosphide
journal, September 2018
- Zheng, Qiye; Li, Sheng; Li, Chunhua
- Advanced Functional Materials, Vol. 28, Issue 43
High Thermal Conductivity in Boron Arsenide: From Prediction to Reality
journal, April 2019
- Tian, Fei; Ren, Zhifeng
- Angewandte Chemie, Vol. 131, Issue 18
Seeded growth of boron arsenide single crystals with high thermal conductivity
journal, January 2018
- Tian, Fei; Song, Bai; Lv, Bing
- Applied Physics Letters, Vol. 112, Issue 3
Impurity-derived p -type conductivity in cubic boron arsenide
journal, December 2018
- Lyons, John L.; Varley, Joel B.; Glaser, Evan R.
- Applied Physics Letters, Vol. 113, Issue 25
Mechanical properties of boron arsenide single crystal
journal, April 2019
- Tian, Fei; Luo, Kun; Xie, Chenlong
- Applied Physics Letters, Vol. 114, Issue 13
Perspective on ab initio phonon thermal transport
journal, August 2019
- Lindsay, Lucas; Katre, Ankita; Cepellotti, Andrea
- Journal of Applied Physics, Vol. 126, Issue 5
Comparison of four-probe thermal and thermoelectric transport measurements of thin films and nanostructures with microfabricated electro-thermal transducers
journal, February 2018
- Kim, Jaehyun; Fleming, Evan; Zhou, Yuanyuan
- Journal of Physics D: Applied Physics, Vol. 51, Issue 10
Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide
journal, July 2016
- Protik, Nakib Haider; Carrete, Jesús; Katcho, Nebil A.
- Physical Review B, Vol. 94, Issue 4
Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids
journal, October 2017
- Feng, Tianli; Lindsay, Lucas; Ruan, Xiulin
- Physical Review B, Vol. 96, Issue 16
Ab initio phonon point defect scattering and thermal transport in graphene
journal, January 2018
- Polanco, Carlos A.; Lindsay, Lucas
- Physical Review B, Vol. 97, Issue 1
Antisite Pairs Suppress the Thermal Conductivity of BAs
journal, September 2018
- Zheng, Qiang; Polanco, Carlos A.; Du, Mao-Hua
- Physical Review Letters, Vol. 121, Issue 10
Unusual high thermal conductivity in boron arsenide bulk crystals
journal, July 2018
- Tian, Fei; Song, Bai; Chen, Xi
- Science, Vol. 361, Issue 6402
High thermal conductivity in cubic boron arsenide crystals
journal, July 2018
- Li, Sheng; Zheng, Qiye; Lv, Yinchuan
- Science, Vol. 361, Issue 6402