Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
- Department of Physics, National Sun Yat-sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China)
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)
- Department of Photonics, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung 80424, Taiwan (China)
- Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan 701, Taiwan (China)
This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.
- OSTI ID:
- 22591655
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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