Enhanced emission of quantum dots embedded within the high-index dielectric regions of photonic crystal slabs

Journal Article · Mon Apr 25 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4948379· OSTI ID:22591628

See, Gloria G. ^[1]; Naughton, Matt S.; Kenis, Paul J. A. ^[2]; Xu, Lu; Nuzzo, Ralph G. ^[3]

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1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801 (United States)
2. Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Roger Adams Laboratory, 600 South Mathews Avenue, Urbana, Illinois 61801 (United States)
3. Department of Chemistry, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801 (United States)

We demonstrate a method for combining sputtered TiO{sub 2} deposition with liquid phase dip-coating of a quantum dot (QD) layer that enables precise depth placement of QD emitters within a high-index dielectric film, using a photonic crystal (PC) slab resonator to demonstrate enhanced emission from the QDs when they are located at a specific depth within the film. The depth of the QDs within the PC is found to modulate the resonant wavelength of the PC as well as the emission enhancement efficiency, as the semiconducting material embedded within the dielectric changes its spatial overlap with the resonant mode.

• OSTI ID: 22591628
• Journal Information: Applied Physics Letters, Vol. 108, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTALS
DIELECTRIC MATERIALS
DIP COATING
EMISSION
FILMS
LAYERS
QUANTUM DOTS
RESONATORS
SEMICONDUCTOR MATERIALS
SLABS
SPUTTERING
TITANIUM OXIDES
WAVELENGTHS