skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Abstract

Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growthmore » method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.« less

Authors:
; ; ;  [1]; ;  [2];  [2]
  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  2. Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France)
Publication Date:
OSTI Identifier:
22591626
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ADHESIVES; CATHODOLUMINESCENCE; ELECTROLUMINESCENCE; GALLIUM NITRIDES; LAYERS; METALS; QUANTUM WELLS; ROUGHNESS; SAPPHIRE; SUBSTRATES; SURFACES; THICKNESS; TWO-DIMENSIONAL SYSTEMS; VAN DER WAALS FORCES; VAPOR PHASE EPITAXY

Citation Formats

Ayari, Taha, Li, Xin, Voss, Paul L., Ougazzaden, Abdallah, Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz, Sundaram, Suresh, El Gmili, Youssef, Salvestrini, Jean Paul, and Université de Lorraine, LMOPS, EA 4423, 57070 Metz. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN. United States: N. p., 2016. Web. doi:10.1063/1.4948260.
Ayari, Taha, Li, Xin, Voss, Paul L., Ougazzaden, Abdallah, Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz, Sundaram, Suresh, El Gmili, Youssef, Salvestrini, Jean Paul, & Université de Lorraine, LMOPS, EA 4423, 57070 Metz. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN. United States. doi:10.1063/1.4948260.
Ayari, Taha, Li, Xin, Voss, Paul L., Ougazzaden, Abdallah, Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz, Sundaram, Suresh, El Gmili, Youssef, Salvestrini, Jean Paul, and Université de Lorraine, LMOPS, EA 4423, 57070 Metz. Mon . "Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN". United States. doi:10.1063/1.4948260.
@article{osti_22591626,
title = {Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN},
author = {Ayari, Taha and Li, Xin and Voss, Paul L. and Ougazzaden, Abdallah and Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz and Sundaram, Suresh and El Gmili, Youssef and Salvestrini, Jean Paul and Université de Lorraine, LMOPS, EA 4423, 57070 Metz},
abstractNote = {Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.},
doi = {10.1063/1.4948260},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 108,
place = {United States},
year = {2016},
month = {4}
}