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Title: Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Abstract

Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO{sub 2} mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p{sup +}–Si/n{sup +}–GaAs p–n diodes.

Authors:
 [1];  [2]; ;  [3]
  1. Department of Electrical Engineering, UCLA, Los Angeles, California 90095 (United States)
  2. Departments of Physics/Materials Science and Engineering, Boise State University, Boise, Idaho 83725 (United States)
  3. Department of Materials Science and Engineering, UCLA, Los Angeles, California 90095 (United States)
Publication Date:
OSTI Identifier:
22591611
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRICAL PROPERTIES; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SILICON OXIDES; STRAINS; SUBSTRATES; SURFACE ENERGY; SURFACES; TRAPPING

Citation Formats

Chang, Yoon Jung, E-mail: shyj13@ucla.edu, Woo, Jason C. S., Simmonds, Paul J., Beekley, Brett, and Goorsky, Mark S. Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4947436.
Chang, Yoon Jung, E-mail: shyj13@ucla.edu, Woo, Jason C. S., Simmonds, Paul J., Beekley, Brett, & Goorsky, Mark S. Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy. United States. doi:10.1063/1.4947436.
Chang, Yoon Jung, E-mail: shyj13@ucla.edu, Woo, Jason C. S., Simmonds, Paul J., Beekley, Brett, and Goorsky, Mark S. Mon . "Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy". United States. doi:10.1063/1.4947436.
@article{osti_22591611,
title = {Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy},
author = {Chang, Yoon Jung, E-mail: shyj13@ucla.edu and Woo, Jason C. S. and Simmonds, Paul J. and Beekley, Brett and Goorsky, Mark S.},
abstractNote = {Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO{sub 2} mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p{sup +}–Si/n{sup +}–GaAs p–n diodes.},
doi = {10.1063/1.4947436},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 108,
place = {United States},
year = {2016},
month = {4}
}