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Title: Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization

Abstract

We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO{sub 2} substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain.

Authors:
 [1]; ;  [1];  [2]
  1. Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)
  2. (Norway)
Publication Date:
OSTI Identifier:
22591600
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; EPITAXY; FABRICATION; GRAPHENE; PEAKS; PHONONS; RED SHIFT; SILICON OXIDES; STRAINS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Høiaas, I. M., Kim, D. C., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no, Weman, H., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no, and CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim. Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization. United States: N. p., 2016. Web. doi:10.1063/1.4947101.
Høiaas, I. M., Kim, D. C., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no, Weman, H., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no, & CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim. Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization. United States. doi:10.1063/1.4947101.
Høiaas, I. M., Kim, D. C., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no, Weman, H., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no, and CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim. Mon . "Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization". United States. doi:10.1063/1.4947101.
@article{osti_22591600,
title = {Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization},
author = {Høiaas, I. M. and Kim, D. C., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no and Weman, H., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no and CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim},
abstractNote = {We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO{sub 2} substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain.},
doi = {10.1063/1.4947101},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 108,
place = {United States},
year = {2016},
month = {4}
}