Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization
- Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)
We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO{sub 2} substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain.
- OSTI ID:
- 22591600
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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