Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

Journal Article · Mon Apr 11 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4947063· OSTI ID:22591564

Hwang, Ah Young; Ji, Hyuk ^[1]; Kim, Sang Tae; Shin, Yeonwoo

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1. Department of Materials Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of)

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm{sup 2}/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (V{sub TH}) of 1.5 V, and I{sub ON/OFF} ratio of ∼10{sup 7}. A significant improvement in the field-effect mobility (up to ∼33.5 cm{sup 2}/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V{sub TH}, or I{sub ON/OFF} ratio due to the presence of a highly ordered microstructure.

• OSTI ID: 22591564
• Journal Information: Applied Physics Letters, Vol. 108, Issue 15; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CRYSTALLIZATION
ELECTRIC POTENTIAL
LAYERS
MICROSTRUCTURE
MOBILITY
SEMICONDUCTOR MATERIALS
TANTALUM
THIN FILMS
TIN
TIN OXIDES
TRANSISTORS
ZINC