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Title: Graphene nanoribbons epitaxy on boron nitride

Abstract

In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

Authors:
; ; ; ; ; ; ; ; ; ; ; ;  [1];  [1]; ;  [2];  [1]
  1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22591447
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; CARRIER MOBILITY; CRYSTALLOGRAPHY; EPITAXY; EQUIPMENT; GRAPHENE; INTERFACES; NANOSTRUCTURES; PERIODICITY; SUPERLATTICES; WIDTH

Citation Formats

Lu, Xiaobo, Wang, Shuopei, Wu, Shuang, Chen, Peng, Zhang, Jing, Zhao, Jing, Meng, Jianling, Xie, Guibai, Wang, Duoming, Wang, Guole, Zhang, Ting Ting, Yang, Rong, Shi, Dongxia, Yang, Wei, Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05, Watanabe, Kenji, Taniguchi, Takashi, Zhang, Guangyu, and Collaborative Innovation Center of Quantum Matter, Beijing 100190. Graphene nanoribbons epitaxy on boron nitride. United States: N. p., 2016. Web. doi:10.1063/1.4943940.
Lu, Xiaobo, Wang, Shuopei, Wu, Shuang, Chen, Peng, Zhang, Jing, Zhao, Jing, Meng, Jianling, Xie, Guibai, Wang, Duoming, Wang, Guole, Zhang, Ting Ting, Yang, Rong, Shi, Dongxia, Yang, Wei, Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05, Watanabe, Kenji, Taniguchi, Takashi, Zhang, Guangyu, & Collaborative Innovation Center of Quantum Matter, Beijing 100190. Graphene nanoribbons epitaxy on boron nitride. United States. doi:10.1063/1.4943940.
Lu, Xiaobo, Wang, Shuopei, Wu, Shuang, Chen, Peng, Zhang, Jing, Zhao, Jing, Meng, Jianling, Xie, Guibai, Wang, Duoming, Wang, Guole, Zhang, Ting Ting, Yang, Rong, Shi, Dongxia, Yang, Wei, Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05, Watanabe, Kenji, Taniguchi, Takashi, Zhang, Guangyu, and Collaborative Innovation Center of Quantum Matter, Beijing 100190. Mon . "Graphene nanoribbons epitaxy on boron nitride". United States. doi:10.1063/1.4943940.
@article{osti_22591447,
title = {Graphene nanoribbons epitaxy on boron nitride},
author = {Lu, Xiaobo and Wang, Shuopei and Wu, Shuang and Chen, Peng and Zhang, Jing and Zhao, Jing and Meng, Jianling and Xie, Guibai and Wang, Duoming and Wang, Guole and Zhang, Ting Ting and Yang, Rong and Shi, Dongxia and Yang, Wei and Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 and Watanabe, Kenji and Taniguchi, Takashi and Zhang, Guangyu and Collaborative Innovation Center of Quantum Matter, Beijing 100190},
abstractNote = {In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.},
doi = {10.1063/1.4943940},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 108,
place = {United States},
year = {2016},
month = {3}
}