Role of target-substrate distance on the growth of CuInSe{sub 2} thin films by pulsed laser ablation technique

Journal Article · Fri May 06 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4946304· OSTI ID:22591380

Rawat, Kusum; Dhruvashi, ^[1]

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1. Department of Electronics, Zakir Husain Delhi College, University of Delhi, Delhi, 110002 (India)

CuInSe{sub 2} thin films have been deposited on corning glass substrates by pulsed laser ablation technique. The chamber pressure and substrate temperature was maintained at 1 × 10{sup −6} torr and 550°C respectively during deposition of the films. The influence of target to substrate (T-S) distance on the structural and optical properties of thin films have been investigated by grazing incidence x-ray diffraction, Raman spectroscopy, scanning electron microscope and UV-Vis-NIR spectroscopy. The study reveals that thin films crystallized in a chalcopyrite structure with highly preferential orientation along (112) plane. Optimum T-S distance has been attained for the growth of thin films with large grain size. An intense Raman peak at 174 cm{sup −1} corresponding to dominant A{sub 1} vibration mode is gradually shifted to smaller wavenumber with the increase in T-S distance. The optical bandgap energy of the films was evaluated and found to vary with the T-S distance. The bandgap tailing was observed to obey the Urbach rule and the Urbach energy was also calculated for the films. Scanning electron micrographs depicts uniform densely packed grains and EDAX studies revealed the elemental composition of CuInSe{sub 2} thin films.

• OSTI ID: 22591380
• Journal Information: AIP Conference Proceedings, Vol. 1728, Issue 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
CHALCOPYRITE
COPPER COMPOUNDS
CRYSTAL GROWTH
DISTANCE
ENERGY GAP
GLASS
GRAIN SIZE
INDIUM SELENIDES
NEAR INFRARED RADIATION
OPTICAL PROPERTIES
OSCILLATION MODES
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
TETRAGONAL LATTICES
THIN FILMS
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA
X-RAY DIFFRACTION