skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping

Abstract

We report on a chemical free one-off imprinting method to fabricate two dimensional (2D) van der Waals (vdWs) materials based transistors. Such one-off imprinting technique is the simplest and effective way to prevent unintentional chemical reaction or damage of 2D vdWs active channel during device fabrication process. 2D MoS{sub 2} nanosheets based transistors with a hexagonal-boron-nitride (h-BN) passivation layer, prepared by one-off imprinting, show negligible variations of transfer characteristics after chemical vapor deposition process. In addition, this method enables the fabrication of all 2D MoS{sub 2} transistors consisting of h-BN gate insulator, and graphene source/drain and gate electrodes without any chemical damage.

Authors:
 [1]
  1. Department of Nanomaterials and Nano Science, Korea University of Science and Technology (KUST), Daejeon 34113 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22590824
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 25; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; ELECTRODES; FABRICATION; GRAPHENE; MOLYBDENUM SULFIDES; NANOSTRUCTURES; PASSIVATION; SHEETS; SILICON OXIDES; TRANSISTORS; TWO-DIMENSIONAL SYSTEMS; VAN DER WAALS FORCES

Citation Formats

Lee, Young Tack, E-mail: 023273@kist.re.kr, E-mail: stunalren@gmail.com, Choi, Won Kook, Materials and Life Science Research Division, Korea Institute of Science and Technology, Hwang, Do Kyung, E-mail: dkhwang@kist.re.kr, and Department of Nanomaterials and Nano Science, Korea University of Science and Technology. Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping. United States: N. p., 2016. Web. doi:10.1063/1.4954223.
Lee, Young Tack, E-mail: 023273@kist.re.kr, E-mail: stunalren@gmail.com, Choi, Won Kook, Materials and Life Science Research Division, Korea Institute of Science and Technology, Hwang, Do Kyung, E-mail: dkhwang@kist.re.kr, & Department of Nanomaterials and Nano Science, Korea University of Science and Technology. Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping. United States. https://doi.org/10.1063/1.4954223
Lee, Young Tack, E-mail: 023273@kist.re.kr, E-mail: stunalren@gmail.com, Choi, Won Kook, Materials and Life Science Research Division, Korea Institute of Science and Technology, Hwang, Do Kyung, E-mail: dkhwang@kist.re.kr, and Department of Nanomaterials and Nano Science, Korea University of Science and Technology. Mon . "Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping". United States. https://doi.org/10.1063/1.4954223.
@article{osti_22590824,
title = {Chemical free device fabrication of two dimensional van der Waals materials based transistors by using one-off stamping},
author = {Lee, Young Tack, E-mail: 023273@kist.re.kr, E-mail: stunalren@gmail.com and Choi, Won Kook and Materials and Life Science Research Division, Korea Institute of Science and Technology and Hwang, Do Kyung, E-mail: dkhwang@kist.re.kr and Department of Nanomaterials and Nano Science, Korea University of Science and Technology},
abstractNote = {We report on a chemical free one-off imprinting method to fabricate two dimensional (2D) van der Waals (vdWs) materials based transistors. Such one-off imprinting technique is the simplest and effective way to prevent unintentional chemical reaction or damage of 2D vdWs active channel during device fabrication process. 2D MoS{sub 2} nanosheets based transistors with a hexagonal-boron-nitride (h-BN) passivation layer, prepared by one-off imprinting, show negligible variations of transfer characteristics after chemical vapor deposition process. In addition, this method enables the fabrication of all 2D MoS{sub 2} transistors consisting of h-BN gate insulator, and graphene source/drain and gate electrodes without any chemical damage.},
doi = {10.1063/1.4954223},
url = {https://www.osti.gov/biblio/22590824}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 108,
place = {United States},
year = {2016},
month = {6}
}